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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Pedrosa, Paulo
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2019Nanocomposite thin films based on Au-Ag nanoparticles embedded in a CuO matrix for localized surface plasmon resonance sensingcitations
- 2019Electrical resistivity and elastic wave propagation anisotropy in glancing angle deposited tungsten and gold thin films
- 2018W-Cu sputtered thin films grown at oblique angles from two sources: Pressure and shielding effectscitations
- 2018Optimization of nanocomposite Au/TiO2 thin films towards LSPR optical-sensingcitations
- 2018Nano-sculptured Janus-like TiAg thin films obliquely deposited by GLAD co-sputtering for temperature sensingcitations
- 2017In situ electrical resistivity measurements of vanadium thin films performed in vacuum during different annealing cycles
- 2017W-Cu sputtered thin films grown at oblique angles from two sources: Pressure and shielding effects
- 2017Correlation between structure and electrical resistivity of W-Cu thin films prepared by GLAD co-sputteringcitations
- 2016Controlled thermal oxidation of nano structured vanadium thin films
- 2016Temperature dependence of electrical resistivity in oxidized vanadium films grown by the GLAD techniquecitations
- 2015Study of the electrical behavior of nanostructured Ti-Ag thin films prepared by Glancing Angle Deposition
- 2014Electrochemical behaviour of nanocomposite Agx:TiN thin filmsfor dry biopotential electrodescitations
- 2014Electrical characterizationofAg:TiNthin films producedbyglancing angle depositioncitations
- 2014Ag:TiN nanocomposite thin films produced by Glancing Angle Deposition for flexible dry biopotential electrodes
- 2013TiAgx thin films for lower limb prosthesis pressure sensors: Effect of composition and structural changes on the electrical and thermal response of the filmscitations
- 2013Growth and Characterization of Nanocomposite Ag:TiN Thin Films Produced by Glancing Angle Deposition for Biopotential Electrodes
- 2013Nanocomposite Ag:TiN thin films for dry biopotential electrodescitations
- 2013Silver-doped TiNx nanocomposite thin films for biosignals (EEG and ECG) acquisition
- 2012Silver doped TiNx nanocomposites: effect of composition and structural changes in the electrical response of the films
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article
Temperature dependence of electrical resistivity in oxidized vanadium films grown by the GLAD technique
Abstract
Vanadium and vanadium oxide thin films are deposited by DC magnetron sputtering. A first series of pure vanadium films are prepared by glancing angle deposition (GLAD). The incident angle α of the particle flux is systematically changed from 0 to 85°. For the second series, the angle α is kept at 85° and oxygen gas is injected during the growth by means of the reactive gas pulsing process (RGPP). A constant pulsing period P = 16 s is used whereas the oxygen injection time tON is varied from 0 to 6 s. After depositing, films are annealed in air following 11 incremental cycles from room temperature up to 550 °C. For both series, the DC electrical resistivity is systematically measured during the annealing treatment. Vanadium films sputter deposited by GLAD become sensitive to the temperature for incident angles α higher than 60°. The most significant annealing effect is observed for films prepared with α = 85° with a strong increase of resistivity from 2.6 × 10− 5 to 4.9 × 10− 3 Ωm. It is mainly assigned to the oxidation of GLAD vanadium films, which is favoured by the high porous morphology produced for the highest incident angles. The resistivity vs. temperature evolution is also measured and related to the occurrence of the VO2 phase. By combining GLAD and RGPP processes, the reversible variation of resistivity associated to the VO2 phase is even more pronounced. Oxygen pulsing during deposition and the voided structure produced for the highest incident angles enhance the oxidation of vanadium through the films thickness. The porous architecture by GLAD and the oxygen injection by RGPP have to be carefully controlled and optimized for the growth of vanadium oxide compounds, especially to favour the formation of the VO2 phase.