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Rauch, Jean-Yves
Laboratoire Bourguignon des Matériaux et Procédés
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2024Titanium oxynitride thin films by the reactive sputtering process with an independent pulsing of O2 and N2 gases
- 2022Tunable Electrical Properties of Ti-B-N Thin Films Sputter-Deposited by the Reactive Gas Pulsing Process
- 2016Effect of oxygen vacancies on crystallization and piezoelectric performance of PZTcitations
- 2016Modeling and characterization of piezoelectric beams based on an aluminum nitride thin-film layercitations
- 2016Temperature dependence of electrical resistivity in oxidized vanadium films grown by the GLAD techniquecitations
- 2013Acoustic resonator based on periodically poled lithium niobate ridgecitations
- 2013Metal-to-Dielectric transition induced by annealing of oriented titanium thin films
- 2013Metal-to-dielectric transition induced by annealing of oriented titanium thin filmscitations
- 2012Ammonia gas sensors based on polypyrrole films: Influence of electrodeposition parameterscitations
- 2010Manufacture of microfluidic glass chips by deep plasma etching, femtosecond laser ablation, and anodic bondingcitations
- 2010One-pot electrosynthesis of polyglycine-like thin film on platinum electrodes as transducer for solid state pH measurementscitations
- 2010Electrochemically deposited polyethyleneimine films and their characterizationcitations
- 2009Physical and Mechanical Properties of CrAlN and CrSiN Ternary Systems for Wood Machining Applicationscitations
- 2009Preparation of flat gold terraces for protein chip developmentscitations
- 2007Development of miniaturized pH biosensors based on electrosynthesized polymer filmscitations
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article
Temperature dependence of electrical resistivity in oxidized vanadium films grown by the GLAD technique
Abstract
Vanadium and vanadium oxide thin films are deposited by DC magnetron sputtering. A first series of pure vanadium films are prepared by glancing angle deposition (GLAD). The incident angle α of the particle flux is systematically changed from 0 to 85°. For the second series, the angle α is kept at 85° and oxygen gas is injected during the growth by means of the reactive gas pulsing process (RGPP). A constant pulsing period P = 16 s is used whereas the oxygen injection time tON is varied from 0 to 6 s. After depositing, films are annealed in air following 11 incremental cycles from room temperature up to 550 °C. For both series, the DC electrical resistivity is systematically measured during the annealing treatment. Vanadium films sputter deposited by GLAD become sensitive to the temperature for incident angles α higher than 60°. The most significant annealing effect is observed for films prepared with α = 85° with a strong increase of resistivity from 2.6 × 10− 5 to 4.9 × 10− 3 Ωm. It is mainly assigned to the oxidation of GLAD vanadium films, which is favoured by the high porous morphology produced for the highest incident angles. The resistivity vs. temperature evolution is also measured and related to the occurrence of the VO2 phase. By combining GLAD and RGPP processes, the reversible variation of resistivity associated to the VO2 phase is even more pronounced. Oxygen pulsing during deposition and the voided structure produced for the highest incident angles enhance the oxidation of vanadium through the films thickness. The porous architecture by GLAD and the oxygen injection by RGPP have to be carefully controlled and optimized for the growth of vanadium oxide compounds, especially to favour the formation of the VO2 phase.