| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Crisci, Alexandre
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2024Silver nanowire networks coated with a few nanometer thick aluminum nitride films for ultra-transparent and robust heating applicationscitations
- 2022Green upconversion improvement of TiO2 codoped Er3+-Yb3+ nanoparticles based thin film by adding ALD-Al2O3 for silicon solar cell applicationscitations
- 2020Synthesis of upconversion TiO2:Er3+-Yb3+ nanoparticles and deposition of thin films by spin coating techniquecitations
- 2020Improved critical temperature of superconducting plasma-enhanced atomic layer deposition of niobium nitride thin films by thermal annealingcitations
- 2019Superconducting properties of NbN thin films deposited by plasma enhanced atomic layer deposition using a metalorganic precursor
- 2018Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
- 2016Al2O3 thin films deposited by thermal atomic layer deposition: Characterization for photovoltaic applicationscitations
- 2016Al2O3 thin films deposited by thermal atomic layer deposition: Characterization for photovoltaic applicationscitations
- 2016Growth of boron nitride films on w-AlN (0001), 4° off-cut 4H-SiC (0001), W (110) and Cr (110) substrates by Chemical Vapor Depositioncitations
- 2016An Atomistic View of the Incipient Growth of Zinc Oxide Nanolayerscitations
- 2015Superconducting properties of NbN thin films deposited by plasma enhanced atomic layer deposition using a metalorganic precursor
- 2014Niobium nitride thin films deposited by high temperature chemical vapor depositioncitations
- 2013Carbon corrosion and platinum nanoparticles ripening under open circuit potential conditionscitations
- 2010The effect of carbon nanolayers on wetting of alumina by NiSi alloyscitations
- 2006Raman Imaging and Kelvin Probe Microscopy for the Examination of the Heterogeneity of Doping in Polycrystalline Boron-Doped Diamond Electrodes
- 2005Micro-Raman scattering from undoped and phosphorus-doped (111) homoepitaxial diamond films: Stress imaging of crackscitations
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article
Niobium nitride thin films deposited by high temperature chemical vapor deposition
Abstract
Synthesis of thin niobium nitride (NbN) layers by High Temperature Chemical Vapor Deposition (HTCVD) is presented and the crystallographic orientations are investigated during heteroepitaxial growth on (0001) Al2O3, (0001) AIN template and (11 (2) over bar0)Al2O3. The HTCVD NbN layers are ex-situ characterized by means of X-ray diffraction (XRD) methods, Raman spectroscopy and Transmission Electron Microscopy (TEM). Depending on the deposition temperature, hexagonal NbN or fcc (face-centered cubic) delta-NbN is obtained. Orientation relationships between the fcc delta-NbN layer with respect to the substrates are given. We discuss the role of an AIN layer as a possible protective layer of the sapphire for the synthesis of fcc delta-NbN.