693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sarakinos, Kostas
University of Helsinki
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (37/37 displayed)
- 2024Unravelling the effect of nitrogen on the morphological evolution of thin silver films on weakly-interacting substratescitations
- 2023In situ and real-time studies of ultrathin silver films grown by physical vapor deposition
- 2022Manipulation of thin metal film morphology on weakly interacting substrates via selective deployment of alloying speciescitations
- 2021On the effect of copper as wetting agent during growth of thin silver films on silicon dioxide substratescitations
- 2021Clustering and Morphology Evolution of Gold on Nanostructured Surfaces of Silicon Carbidecitations
- 2021Clustering and Morphology Evolution of Gold on Nanostructured Surfaces of Silicon Carbide : Implications for Catalysis and Sensingcitations
- 2020The effect of kinetics on intrinsic stress generation and evolution in sputter-deposited films at conditions of high atomic mobilitycitations
- 2020In situ and real-time nanoscale monitoring of ultra-thin metal film growth using optical and electrical diagnostic toolscitations
- 2020Manipulation of epitaxial graphene towards novel properties and applicationscitations
- 20203D-to-2D morphology manipulation of sputter-deposited nanoscale silver films on weakly interacting substrates via selective nitrogen deployment for multifunctional metal contactscitations
- 2019Atomic-scale diffusion rates during growth of thin metal films on weakly-interacting substratescitations
- 2019Semi-empirical force-field model for the Ti 1-x Al x N (0 ≤ x ≤ 1) systemcitations
- 2019Semi-Empirical Force-Field Model For The Ti1-XAlXN (0 ≤ x ≤ 1) Systemcitations
- 2017Synthesis of tunable plasmonic metal-ceramic nanocomposite thin films by temporally modulated sputtered fluxescitations
- 2016A kinetic model for stress generation in thin films grown from energetic vapor fluxescitations
- 2016Compressive intrinsic stress originates in the grain boundaries of dense refractory polycrystalline thin filmscitations
- 2016Theoretical and experimental study of metastable solid solutions and phase stability within the immiscible Ag-Mo binary systemcitations
- 2015Coalescence-controlled and coalescence-free growth regimes during deposition of pulsed metal vapor fluxes on insulating surfacescitations
- 2014Principles for designing sputtering-based strategies for high-rate synthesis of dense and hard hydrogenated amorphous carbon thin filmscitations
- 2014Double in-plane alignment in biaxially textured thin filmscitations
- 2014Atomistic view on thin film nucleation and growth by using highly ionized and pulsed vapour fluxescitations
- 2014Deposition of yttria-stabilized zirconia thin films by high power impulse magnetron sputtering and pulsed magnetron sputteringcitations
- 2013Time-domain and energetic bombardment effects on the nucleation and coalescence of thin metal films on amorphous substratescitations
- 2013Atom insertion into grain boundaries and stress generation in physically vapor deposited filmscitations
- 2013Tilt of the columnar microstructure in off-normally deposited thin films using highly ionized vapor fluxescitations
- 2012Influence of ionization degree on film properties when using high power impulse magnetron sputteringcitations
- 2012Influence of ionization degree on film properties when using high power impulse magnetron sputteringcitations
- 2012An introduction to thin film processing using high-power impulse magnetron sputteringcitations
- 2012Growth of ti-C nanocomposite films by reactive high power impulse magnetron sputtering under industrial conditionscitations
- 2012Exploring the potential of high power impulse magnetron sputtering for growth of diamond-like carbon filmscitations
- 2010High power pulsed magnetron sputteringcitations
- 2010Ab initio study of effects of substitutional additives on the phase stability of γ -aluminacitations
- 2009On the phase formation of titanium oxide films grown by reactive high power pulsed magnetron sputteringcitations
- 2008Tailoring of structure formation and phase composition in reactively sputtered zirconium oxide films using nitrogen as an additional reactive gascitations
- 2007Process characteristics and film properties upon growth of TiOx films by high power pulsed magnetron sputteringcitations
- 2007The role of backscattered energetic atoms in film growth in reactive magnetron sputtering of chromium nitridecitations
- 2005Structural factors determining the nanomechanical performance of transition metal nitride films
Places of action
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article
Growth of ti-C nanocomposite films by reactive high power impulse magnetron sputtering under industrial conditions
Abstract
Titanium carbide (TiC) films were deposited employing high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) in an Ar-C 2 H 2 atmosphere of various compositions. Analysis of the structural, bonding and compositional characteristics revealed that the deposited films are either TiC and hydrogenated amorphous carbon (a-C:H) nanocomposites, nanocrystalline TiC, or Ti/TiC, depending on the C/Ti ratio. It was found that Ti-C films grown by HiPIMS show a C/Ti ratio of close to 1 for a wide C 2 H 2 flow range (4-15 sccm), with free C ranging from 0 to 20%. Thus, films ranging from near stoichiometric single phase TiC to TiC/a-C:H nanocomposites can be synthesized. This was not the case for DCMS, where films grown using similar deposition rates as for HiPIMS formed larger fractions of amorphous C matrix, thus being nanocomposites in the same C 2 H 2 (above 4 sccm) flow range. For a C/Ti ratio of 1 the resistivity is low (4-8 × 10 2 μΩ cm) for the HiPIMS films, and high (> 100 × 10 2 μΩ cm) for the DCMS films. The hardness also shows a big difference with 20-27 and 6-10 GPa for HiPIMS and DCMS grown films, respectively.