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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Virbukas, Darius
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2013The investigation of e-beam deposited titanium dioxide and calcium titanate thin filmscitations
- 2012Synthesis and characterization of multilayered GDC and SDC thin films deposited by e-beam technique
- 2011Scandium stabilized zirconium thin films formation by e-beam techniquecitations
- 2011The properties of scandium and cerium stabilized zirconium thin films formed by e-beam techniquecitations
- 2011Influence of initial powder particle size on yttrium stabilized zirconium thin films formed by e-beam techniquecitations
- 2010The properties of gadolinium doped cerium oxide thin films formed evaporating nanopowder ceramic
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article
The properties of scandium and cerium stabilized zirconium thin films formed by e-beam technique
Abstract
Scandium and cerium stabilized zirconium (10Sc1CeSZ) thin ceramic films were formed evaporating (ZrO2)0.89(CeO2)0.01(Sc2O3)0.10 micro powder using e-beam evaporation technique. The influence of deposition rate on formed thin films electrical properties and microstructure was studied. 10Sc1CeSZ thin films were deposited on two types of different substrates: optical quartz (SiO2) and Alloy 600 (Fe–Ni–Cr). Deposition rate was changed from 2 to 16 Å/s to understand its influence on thin film formation and other properties. The formed 10Sc1CeSZ thin films keep the cubic crystal structure as the initial evaporated powder material but change the main crystallographic peak from (111) to (200) for both types of substrate and used deposition rates. It was determined that the crystallites size increases from 19.0 to 24.9 nm and from 15.6 to 19.9 nm on optical quartz and Alloy 600 respectively by increasing the deposition rate (in range from 2 to 16 Å/s). The thin film density decreases by increasing the deposition rate. The ionic conductivity of 10Sc1CeSZ thin films was determined by impedance spectroscopy in the frequency range from 0.1 Hz to 1.0 MHz in temperature range from 473 K to 873 K. The best ionic conductivity σtot=4.91 ·10−2 Sm−1 at 873 K temperature and the lowest value of activation energy ΔEa=0.88 eV were found for 10Sc1CeSZ thin films formed at 4 Å/s deposition rate.