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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sopanen, Markku
in Cooperation with on an Cooperation-Score of 37%
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Publications (10/10 displayed)
- 2020Metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaNcitations
- 2017Grass-like Alumina with Low Refractive Index for Scalable, Broadband, Omnidirectional Antireflection Coatings on Glass Using Atomic Layer Depositioncitations
- 2010GaAs nanowire and crystallite growth on amorphous substrate from metalorganic precursorscitations
- 2009Maskless roughening of sapphire substrates for enhanced light extraction of nitride based blue LEDscitations
- 2008Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layercitations
- 2007Reduction of threading dislocation density in Al0.12Ga0.88N epilayers by a multistep techniquecitations
- 2007Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor depositioncitations
- 2007Reduction of threading dislocation density in A1 0.12 Ga 0.88 N epilayers by a multistep techniquecitations
- 2006Comparison of epitaxial thin layer GaN and InP passivations on InGaAs near-surface quantum wellscitations
- 2006Morphology optimization of MOCVD-grown GaN nucleation layers by the multistep techniquecitations
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article
Maskless roughening of sapphire substrates for enhanced light extraction of nitride based blue LEDs
Abstract
A simple wet etching method based on the use of hot sulphuric (H2SO4) acid for roughening of the backside of the sapphire substrates for creating light scattering objects without any lithography processes is described. Scanning electron microscope images show that this method offers a possibility to tailor the size of the scattering objects by varying the treatment time. A metal organic vapor phase epitaxy (MOVPE) grown light emitting diode (LED) structure having a roughened sapphire backside exhibits a 20-25% increase of the electroluminescence output power compared to a reference sample on the standard c-plane sapphire at the operating wavelength of 460 nm. © 2008 Elsevier Ltd. All rights reserved.