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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Parish, Giacinta
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2022Determination of thermal conductivity, thermal diffusivity and specific heat capacity of porous silicon thin films using the 3ω methodcitations
- 2019Compensating porosity gradient to produce flat, micromachined porous silicon structurescitations
- 2009Low temperature N2-based passivation technique for porous silicon thin filmscitations
- 2001Effect of growth termination conditions on the performance of AlGaN/GaN high electron mobility transistorscitations
- 2001Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSBcitations
- 2000High breakdown GaN HEMT with overlapping gate structure
- 2000A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifiercitations
- 2000High breakdown GaNHEMT with overlapping gate structurecitations
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article
Low temperature N2-based passivation technique for porous silicon thin films
Abstract
A technique is presented for the passivation of porous silicon (PS) thin films via nitrogen based annealing at the lowest temperature ever reported. Annealing freshly anodized PS thin films at temperatures as low as 520 ∘C under N2 flow in a rapid thermal annealer produces films that show no change in refractive index when exposed to ambient conditions over 60 days. These films also exhibited chemical resistance by surviving a brief dip in both concentrated KOH and buffered HF. Unlike most other PS surface passivation methods, this technique causes negligible reduction in refractive index of the annealed PS thin films. Passivation only occurs when dangling bonds and mono-hydrides populate the PS surface, providing a path for thermal interactions with the N2 gas.