| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Moret, Matthieu
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2024The Influence of Alloy Disorder Effects on the Anisotropy of Emission Diagrams in (Al,Ga)N Quantum Wells Embedded into AlN Barrierscitations
- 2022Determination of the direct bandgap value in In4Se3 thin filmscitations
- 2017Study of $Cu_{2}O{backslash}ZnO$ nanowires heterojunction designed by combining electrodeposition and atomic layer depositioncitations
- 2015Growth, structure and optoelectronic characterizations of high quality Cu2ZnSnS4 thin films obtained by close spaced vapor transportcitations
- 2014Atomic Layer Deposition of zinc oxide for solar cell applicationscitations
- 2010Pressure cycling of InN to 20 GPa: In situ transport properties and amorphizationcitations
- 2010Pressure cycling of InN to 20 GPa: In situ transport properties and amorphizationcitations
- 2003High reflectivity AlGaN/GaN Bragg mirrors grown by MOCVD for microcavities applications.
Places of action
| Organizations | Location | People |
|---|
article
Growth, structure and optoelectronic characterizations of high quality Cu2ZnSnS4 thin films obtained by close spaced vapor transport
Abstract
High quality Cu2ZnSnS4 (CZTS) thin films, as an absorber layer for thin films solar cell, were synthesized successfully using a simple and low cost technique, Close-Space Vapor Transport (CSVT). The films were grown on soda-lime glass substrates using a polycrystalline CZTS ingot as source of evaporation material. Influence of substrate temperature on chemical composition, morphological, structural, electrical and optical properties of the CZTS thin films was investigated using scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), X-ray diffraction (XRD), Raman spectroscopy, UV-Vis-NIR spectrophotometer, Hall effect and photoluminescence (PL) measurements. The results from XRD and Raman characterization confirmed the formation of kesterite CZTS thin films with a (112) plane preferred orientation and Raman shift of 338 cm-1, respectively. When the substrate temperature was increased from 460 to 540 °C, the composition of the thin films becomes Cu-, Sn-poor and Zn-rich, wherein the optical band gap values increased from 1.34 to 1.52 eV. PL spectra show the presence of broad emission band at 1.28 eV. All CZTS thin films exhibit p-type conductivity. With substrate temperature of 500 °C, the CZTS thin films show the best properties as an absorber layer in thin film solar cell (Eg = 1.48 eV, p = 3.4 x1017 cm-3, ρ = 2.6 Ω/cm, μ = 6.4 cm/V.s).