• Basuvalingam, Saravana Balaji
• Broekema, Tim M. P.
• Theeuwes, Roel
• Phung, Nga
• Berghuis, W. J. H.
• Helvoirt, Cristian A. A. Van
• Van De Poll, Mike
• Macco, Bart
• Van De Loo, Bas
• Kessels, W. M. M.

Abstract

Recently, stacks consisting of an ultrathin SiO2 coated with atomic-layer-deposited (ALD) Al-doped zinc oxide (ZnO:Al) have been shown to yield state-of-the-art passivation of n-type crystalline silicon surfaces and provide low contact resistivities to n+-doped Si and poly-Si surfaces. Key for achieving good surface passivation are an intentionally-grown SiO2 interlayer, an aluminum oxide (Al2O3) capping layer and a post-deposition anneal, whereas n-type doping of the ZnO is required to achieve a low contact resistivity. In this work, we present the latest results and insights obtained for this contact stack. This includes a study of the minimum required thicknesses of both the ZnO and the Al2O3 capping layer to achieve a high passivation level after post-deposition anneal. Also, we provide details on how to remove the Al2O3 capping layer selectively from the ZnO:Al after the post-deposition anneal using a pH-controlled wet-etch, such that the ZnO:Al can be contacted by a metal. Whereas previous work was based on lab-scale temporal ALD, in this work we highlight the industrialization potential by demonstrating that these layers can be prepared by spatial ALD, yielding good passivation levels on both undiffused n-type and n+-diffused c-Si surfaces. Finally, we demonstrate the capability of ALD to deposit ZnO:Al layers selectively on oxidized regions of an otherwise HF-last treated c-Si surface. Such area-selective deposition opens up potential pathways for local, self-aligned contact formation. Altogether, this work provides valuable insights into the working mechanism and practical aspects of ZnO:Al-based passivating contacts.

Topics

• impedance spectroscopy
• surface
• resistivity
• aluminum oxide
• aluminium
• zinc
• Silicon
• aligned
• atomic layer deposition