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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Khorani, Edris
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2024Influence of co-reactants on surface passivation by nanoscale hafnium oxide layers grown by atomic layer deposition on siliconcitations
- 2023Mechanisms of silicon surface passivation by negatively charged hafnium oxide thin filmscitations
- 2023Stable chemical enhancement of passivating nanolayer structures grown by atomic layer deposition on siliconcitations
- 2023Electronic band offset determination of oxides grown by atomic layer deposition on siliconcitations
- 2023SiNx and AlOx nanolayers in hole selective passivating contacts for high efficiency silicon solar cellscitations
- 2023Data for Influence of co-reactants on surface passivation by nanoscale hafnium oxide layers grown by atomic layer deposition on siliconcitations
- 2023Hafnium oxide : a thin film dielectric with controllable etch resistance for semiconductor device fabricationcitations
- 2022Engineering the carrier lifetime and switching speed in Si-based mm-wave photomodulatorscitations
- 2022Electronic characteristics of ultra‐thin passivation layers for silicon photovoltaicscitations
- 2022Light scattering from black silicon surfaces and its benefits for encapsulated solar cellscitations
- 2020Optoelectronic properties of ultrathin ALD silicon nitride and its potential as a hole-selective nanolayer for high efficiency solar cellscitations
- 2019Characterization of atomic layer deposited alumina thin films on black silicon textures using helium ion microscopycitations
- 2018Metal-assisted chemically etched black silicon for crystalline silicon solar cells
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article
Light scattering from black silicon surfaces and its benefits for encapsulated solar cells
Abstract
Black silicon (b-Si) has been widely investigated as a potential replacement for more traditional antireflective schemes for silicon solar cells, such as random pyramids, due to its reduced broadband reflectance and improved light-trapping properties. Wavelength and angle resolved scattering (WARS) reflectance measurements provide the means of analysing the amount of light scattered from a textured surface, which can be of interest when considering the amount of light trapped through total internal reflectance (TIR) at various interfaces in an encapsulated photovoltaic module. Here we present and analyse results from WARS measurements on b-Si surfaces fabricated using metal assisted chemical etching (MACE). Large angle scattering is observed for the entire spectrum, increasingly so for shorter incident wavelengths and increasing height of texture features. This is predicted to result in 35-40% of the reflected light being trapped by TIR at the glass-air interface and redirected back onto the sample, when the sample is encapsulated in standard PV module materials. This leads to a calculated additional boost of up to 0.45% in the photogenerated current of an encapsulated black silicon solar cell. This exceeds the calculated 0.21% boost due to TIR predicted for an encapsulated solar cell employing the industry-standard random pyramid texture with a thin film antireflective coating.