| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Dubois, Sébastien
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2024Tracking Hydrogen During Poly-Si/SiOx Contact Fabrication: An Infrared Spectroscopy Analysis of Si–H Bonds Configurations
- 2023Passivating Silicon Tunnel Diode for Perovskite on Silicon nip Tandem Solar Cellscitations
- 2021Evolution of the surface passivation mechanism during the fabrication of ex-situ doped poly-Si(B)/SiOx passivating contacts for high-efficiency c-Si solar cellscitations
- 2021Evolution of the surface passivation mechanism during the fabrication of ex-situ doped poly-Si(B)/SiOx passivating contacts for high-efficiency c-Si solar cellscitations
- 2019Conductivity and Surface Passivation Properties of Boron‐Doped Poly‐Silicon Passivated Contacts for c‐Si Solar Cellscitations
- 2019Impurity Gettering by Boron‐ and Phosphorus‐Doped Polysilicon Passivating Contacts for High‐Efficiency Multicrystalline Silicon Solar Cellscitations
- 2019Plasma‐immersion ion implantation: A path to lower the annealing temperature of implanted boron emitters and simplify PERT solar cell processingcitations
- 2019Study of non fire-through metallization processes of boron-doped polysilicon passivated contacts for high efficiency silicon solar cellscitations
- 2019SiOxNy:B layers for ex-situ doping of hole-selective poly silicon contacts: A passivation studycitations
- 2018Conductivity and Surface Passivation Properties of Boron‐Doped Poly‐Silicon Passivated Contacts for c‐Si Solar Cellscitations
- 2018Improvement of the conductivity and surface passivation properties of boron-doped poly-silicon on oxidecitations
Places of action
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article
Evolution of the surface passivation mechanism during the fabrication of ex-situ doped poly-Si(B)/SiOx passivating contacts for high-efficiency c-Si solar cells
Abstract
Passivating the contacts of crystalline silicon (c-Si) solar cells (SC) with a poly-crystalline silicon (poly-Si) layer on top of a thin silicon oxide (SiOx) is currently sparking interest for reducing carrier recombination at the interface between the metal electrode and the c-Si substrate. However, due to the interrelation between different mechanisms at play, a comprehensive understanding of the surface passivation provided by the poly-Si/SiOx contact in the final SC has not been achieved yet. In the present work, we report on an original ex-situ doping process of the poly-Si layer through the deposition of a B-rich dielectric layer followed by an annealing step to diffuse B dopants in the layer. We propose an in-depth investigation of the passivation scheme of the resulting B-doped poly-Si/SiOx contact by first comparing the surface passivation provided by ex-situ doped and intrinsic poly-Si/SiOx contacts at different steps of the fabrication process. The excellent surface passivation properties obtained with the ex-situ doped poly-Si(B) contact (iVoc = 733 mV and J0 = 6.1 fA cm−2) attests to the good quality of this contact. We then propose further STEM, ECV and ToF-SIMS characterizations to assess: i) the evolution of the microstructure and B-doping profile through ex-situ doping and ii) the diffusion profile of hydrogen in the poly-Si contact. Our results show a gradual filling of the poly-Si layer with active B dopants with increasing annealing temperature (Ta), which strengthens the field-effect passivation and enables an iVoc increase after annealing up to 800 °C. We also observe a diffusion of O from the SiON:B doping layer to the interfacial SiOx layer during annealing, that likely enhances the passivation stability of our ex-situ doped poly-Si contact with increasing Ta. Finally, we conclude that the mechanism dominating the surface passivation changes during the fabrication process of the poly-Si/SiOx contact from field-effect passivation after annealing (performed for B-diffusion in the contact) to chemical passivation after following hydrogenation of the samples (performed by depositing a H-rich silicon nitride layer)