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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Weeber, Arthur
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Topics
Publications (7/7 displayed)
- 2021Design and optimization of hole collectors based on nc-SiOx:H for high-efficiency silicon heterojunction solar cellscitations
- 2021On current collection from supporting layers in perovskite/c-Si tandem solar cellscitations
- 2018Poly-crystalline silicon-oxide films as carrier-selective passivating contacts for c-Si solar cellscitations
- 2017Poly-Si(O)x passivating contacts for high-efficiency c-Si IBC solar cellscitations
- 2003Structural film characteristics related to the passivation properties of high-rate (> 0.5 nm/s) plasma deposited a-SiN x :H
- 2003Influence of the high-temperature "firing" step on high-rate plasma deposited silicon nitride films used as bulk passivating antireflection coatings on silicon solar cells
- 2002High-rate deposition of a-SiNx:H for photovoltaic applications by the expanding thermal plasma
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article
Design and optimization of hole collectors based on nc-SiOx:H for high-efficiency silicon heterojunction solar cells
Abstract
<p>Low activation energy (E<sub>a</sub>) and wide bandgap (E<sub>g</sub>) are essential for (p)-contacts to achieve effective hole collection in silicon heterojunction (SHJ) solar cells. In this work, we study Plasma-Enhanced Chemical Vapor Deposition p-type hydrogenated nanocrystalline silicon oxide, (p)nc-SiO<sub>x</sub>:H, combined with (p)nc-Si:H as (p)-contact in front/back-contacted SHJ solar cells. We firstly determine the effect of a plasma treatment at the (i)a-Si:H/(p)-contact interface on the thickness-dependent E<sub>a</sub> of (p)-contacts. Notably, when the (p)nc-Si:H layer is thinner than 20 nm, the E<sub>a</sub> decreases by applying a hydrogen plasma treatment and a very-high-frequency (i)nc-Si:H treatment. Such an interface treatment also significantly reduces the contact resistivity of the (p)-contact stacks (ρ<sub>c,p</sub>), resulting in an improvement of 6.1%<sub>abs</sub> in fill factor (FF) of the completed cells. Thinning down the (i)a-Si:H passivating layer to 5 nm leads to a low ρ<sub>c,p</sub> (144 mΩ⋅cm<sup>2</sup>) for (p)-contact stacks. Interestingly, we observe an increment of FF from 72.9% to 78.3% by using (p)nc-SiO<sub>x</sub>:H layers featuring larger differences between their optical gap (E<sub>04</sub>) and E<sub>a</sub>, which tend to enhance the built-in potential at the c-Si/(i)a-Si:H interface. Furthermore, we observe clear impacts on ρ<sub>c,p</sub>, open-circuit voltage, and FF by optimizing the thicknesses of (p)-contact that influence its E<sub>a</sub>. In front junction cells, the vertical and lateral collection of holes is affected by ρ<sub>c,p</sub> of (p)-contact stacks. This observation is also supported by TCAD simulations which reveal different components of lateral contributions. Lastly, we obtain both front and rear junction cells with certified FF well-above 80% and the best efficiency of 22.47%.</p>