• Theeuwes, Roel
• Melskens, Jimmy
• Ernst, Marco
• Kessels, W. M. M.
• Macdonald, Daniel

Abstract

Laser doping is a promising route to realise industrially compatible processing of local contacts for high- efficiency solar cells, especially when the same film acts as both dopant source and passivation layer. In this work we demonstrate simultaneous local contact opening and n+laser doping of silicon from positively charged POx/Al2O3 thin-film stacks, which also provide outstanding passivation of n-type silicon surfaces. Local n+doped regions with sheet resistance ranging from 35 to ~540 Ω/□ are formed using single nanosecond laser pulses with varying fluence. ECV profiling shows net n-type doping in all cases, confirmed by SIMS profiling to be due to phosphorus from the POx layer. J0 of metallised laser-doped regions is consistent with values achieved for state- of-the-art furnace diffusions with similar sheet resistance, confirming that laser-induced recombination-active defects are avoided. A minimum J0 of 540 fA cm− 2 is obtained for metallised laser-doped regions formed from POx/Al2O3 passivation stacks having J0 of 2.5 fA cm− 2. The combination of outstanding passivation of uncontacted n-type regions offered by POx/Al2O3, with self-aligned formation of locally-diffused contact openings via single-step laser processing, opens up exciting possibilities for simplified fabrication of high-efficiency cell structures.

Topics

• impedance spectroscopy
• surface
• Silicon
• defect
• Phosphorus
• selective ion monitoring
• aligned