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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Beanland, Richard
University of Warwick
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (25/25 displayed)
- 2024Electrodeposition of 2D layered tungsten diselenide thin films using a single source precursorcitations
- 2022Mesoporous silica films as hard templates for electrodeposition of nanostructured goldcitations
- 2022Vertical and Lateral Electrodeposition of 2D Material Heterostructures
- 20222D material based optoelectronics by electroplating
- 20222D material based optoelectronics by electroplating
- 2021Electrodeposited WS 2 monolayers on patterned graphenecitations
- 2021Lateral growth of MoS2 2D material semiconductors over an insulator via electrodepositioncitations
- 2021Lateral growth of MoS 2 2D material semiconductors over an insulator via electrodepositioncitations
- 2020Large-area electrodeposition of few-layer MoS2 on graphene for 2D material heterostructurescitations
- 2020Controlling palladium morphology in electrodeposition from nanoparticles to dendrites via the use of mixed solvents
- 2020Assessment of acid and thermal oxidation treatments for removing sp 2 bonded carbon from the surface of boron doped diamondcitations
- 2020Data for Atomic level termination for passivation and functionalisation of silicon surfaces
- 2020Point defects and interstitial climb of 90° partial dislocations in brown type IIa natural diamondcitations
- 2020Controlling palladium morphology in electrodeposition from nanoparticles to dendrites <i>via</i> the use of mixed solventscitations
- 2020Controlling Pd Morphology in Electrodeposition from Nanoparticles to Dendrites via the use of Mixed Solventscitations
- 2020Large-area electrodeposition of few-layer MoS 2 on graphene for 2D material heterostructurescitations
- 2020Atomic level termination for passivation and functionalisation of silicon surfacescitations
- 2019Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layercitations
- 2019Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layer
- 2019Data for Defect dynamics in self-catalyzed III-V semiconductor nanowires
- 2018Tracking metal electrodeposition dynamics from nucleation and growth of a single atom to a crystalline nanoparticlecitations
- 2018Tracking Metal Electrodeposition Dynamics from Nucleation and Growth of a Single Atom to a Crystalline Nanoparticlecitations
- 2012Multiple hydrogen-bond array reinforced cellular polymer films from colloidal crystalline assemblies of soft latex particlescitations
- 2011Accuracy of composition measurement using X-ray spectroscopy in precipitate-strengthened alloys: Application to Ni-base superalloyscitations
- 2011Structure of planar defects in tilted perovskitescitations
Places of action
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article
Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layer
Abstract
Thermophotovoltaic (TPV) devices based on GaInAsSb lattice matched to GaSb (100) substrates have demonstrated high external quantum efficiencies (EQEs) in the mid-infrared spectral range, making them promising candidates for waste heat recovery from high temperature “blackbody” sources. In this work, the GaInAsSb alloy has been integrated onto more cost-effective GaAs (100) substrates by using advanced metamorphic buffer layer techniques in molecular beam epitaxy (MBE), which included an interfacial misfit (IMF) array at the GaSb/GaAs interface followed by GaInSb/GaSb dislocation filtering layers. The threading dislocations in the GaInAsSb region can be efficiently supressed, resulting in high quality materials for TPV applications. To determine the performance of the GaInAsSb TPV on GaAs it was compared with a cell grown lattice matched onto GaSb substrate having the same structure. The resulting TPV on GaAs exhibited similar dark current-voltage characteristics with that on GaSb. Under illumination from an 800 °C silicon nitride emitter, the short circuit current density (Jsc) from the GaInAsSb TPVs on GaAs reached more than 90% of the control cell on GaSb, and the open circuit voltage (Voc) exceeded 80% of the cell on GaSb. The EQE from the TPV on GaAs reached around 62%, the highest value reported from this type of TPV on GaAs. With improved TPV structure design, large area GaInAsSb TPV panels on GaAs substrates can be realized in the future for waste heat energy recovery applications.