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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ruseckas, Arvydas
University of St Andrews
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2023Chlorine retention enables the indoor light harvesting of triple halide wide bandgap perovskitescitations
- 2020Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layerscitations
- 2020Low threshold polariton lasing from a solution-processed organic semiconductor in a planar microcavitycitations
- 2019Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layerscitations
- 2019Low threshold polariton lasing from a solution-processed organic semiconductor in a planar microcavitycitations
- 2019Efficient indoor pin hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layerscitations
- 2019Improved efficiency of PbS quantum dot sensitized NiO photocathodes with naphthalene diimide electron acceptor bound to the surface of the nanocrystalscitations
- 2019Interface limited hole extraction from methylammonium lead iodide filmscitations
- 2019Interface limited hole extraction from methylammonium lead iodide filmscitations
- 2019Hole delocalization as a driving force for charge pair dissociation in organic photovoltaicscitations
- 2018Improved efficiency of PbS quantum dot sensitized NiO photocathodes with naphthalene diimide electron acceptor bound to the surface of the nanocrystalscitations
- 2017Tuning crystalline ordering by annealing and additives to study its effect on exciton diffusion in a polyalkylthiophene copolymercitations
- 2016Self-trapping and excited state absorption in fluorene homo-polymer and copolymers with benzothiadiazole and tri-phenylaminecitations
- 2015Controlling exciton diffusion and fullerene distribution in photovoltaic blends by side chain modificationcitations
- 2012Nanosecond two-photon absorption and lasing in fluorene-based organic semiconductors
- 2012A Shift from Diffusion Assisted to Energy Transfer Controlled Fluorescence Quenching in Polymer-Fullerene Photovoltaic Blendscitations
- 2009A two-photon pumped polyfluorene lasercitations
- 2009Effects of thermal annealing on the photophysical properties of bisfluorene-cored dendrimer filmscitations
- 2008Thickness Dependence of the Fluorescence Lifetime in Films of Bisfluorene-Cored Dendrimerscitations
- 2008Distance dependence of excitation energy transfer between spacer-separated conjugated polymer filmscitations
Places of action
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article
Improved efficiency of PbS quantum dot sensitized NiO photocathodes with naphthalene diimide electron acceptor bound to the surface of the nanocrystals
Abstract
Hybrid materials combining a wide bandgap metal oxide semiconductor, metal chalcogenide nanocrystals and molecular systems represent very attractive materials for fabricating devices with new function or improved photoelectrochemical performances. This study deals with sensitization of NiO, which is a p-type semiconductor, by quantum dots (QDs) of PbS with an average diameter of 3 nm. The PbS QDs were attached to the monocrystalline film of NiO by mercaptopropionic acid linker and were subsequently capped with methyl-pyridine naphthalene diimide (NDI) units to prepare quantum dot sensitized solar cells (p-QDSSCs) on NiO electrodes. Time-resolved photoluminescence measurements of the PbS emission were used to determine the rate constants for charge transfer from the PbS exciton to the NiO, cobalt based redox mediator and NDI. Notably, it was shown that NDI quenches the PbS exciton by electron transfer with a quite fast rate constant (6.9 x 10 7 s -1 ). The PbS QDs sensitized NiO films were finally used to fabricate solar cells with tris(4,4’-di tert -butyl-2,2’-bipyridine) cobalt(III/II) as redox mediator. It was observed that the presence of NDI on PbS improved the photovoltaic performance by 50% relative to that of cells without NDI, leading to a device with the following characteristics: Jsc = 5.75 mA/cm 2 , Voc = 226 mV, ff = 34% and PCE = 0.44%. This study demonstrates that photogalvanic processes can be a productive pathway to better performing sensitized p-type semiconductor for p-QDSSC. In other words, photoinduced electron transfer from the QDs towards the electrolyte rather than initial photoinduced charge injection into the p-type semiconductor can be a favorable operative mechanism in QD sensitized NiO films and might be exploited further for the construction of better performing solar cells or photocatalytic devices.