| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sajjad, Muhammad Tariq
London South Bank University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2024Improvements in dielectric, electrical and magnetic contributions in Ca0.5Co0.5CrxFe2-xO4 spinel ferrites by the substitution of Cr3+ ions
- 2021Development of Quantum Dot (QD) Based Color Converters for Multicolor Display.
- 2021Development of Quantum Dots (QD) based color converters for multicolor displaycitations
- 2020Direct Growth of Vertically Aligned Carbon Nanotubes onto Transparent Conductive Oxide Glass for Enhanced Charge Extraction in Perovskite Solar Cellscitations
- 2019Triptycene as a supramolecular additive in PTB7:PCBM blends and its influence on photovoltaic propertiescitations
- 2019CuSCN nanowires as electrodes for p-type quantum dot sensitized solar cells : charge transfer dynamics and alumina passivationcitations
- 2019Efficient indoor pin hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layerscitations
- 2019Interface limited hole extraction from methylammonium lead iodide filmscitations
- 2019Interface limited hole extraction from methylammonium lead iodide filmscitations
- 2019Highly efficient fullerene and non-fullerene based ternary organic solar cells incorporating a new tetrathiocin-cored semiconductorcitations
- 2018Triptycene as a supramolecular additive in PTB7:PCBM blends and its influence on photovoltaic propertiescitations
- 2018Triptycene as a Supramolecular Additive in PTB7: PCBM blends and its Influence on Photovoltaic Propertiescitations
- 2018Improved efficiency of PbS quantum dot sensitized NiO photocathodes with naphthalene diimide electron acceptor bound to the surface of the nanocrystalscitations
- 2018CuSCN nanowires as electrodes for p-type quantum dot sensitized solar cells:charge transfer dynamics and alumina passivationcitations
- 2017Narrow-band anisotropic electronic structure of ReS2citations
- 2017Tuning crystalline ordering by annealing and additives to study its effect on exciton diffusion in a polyalkylthiophene copolymercitations
- 2015Controlling exciton diffusion and fullerene distribution in photovoltaic blends by side chain modificationcitations
- 2015In situ formation and photo patterning of emissive quantum dots in organic small moleculescitations
Places of action
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article
Improved efficiency of PbS quantum dot sensitized NiO photocathodes with naphthalene diimide electron acceptor bound to the surface of the nanocrystals
Abstract
Hybrid materials combining a wide bandgap metal oxide semiconductor, metal chalcogenide nanocrystals and molecular systems represent very attractive materials for fabricating devices with new function or improved photoelectrochemical performances. This study deals with sensitization of NiO, which is a p-type semiconductor, by quantum dots (QDs) of PbS with an average diameter of 3 nm. The PbS QDs were attached to the monocrystalline film of NiO by mercaptopropionic acid linker and were subsequently capped with methyl-pyridine naphthalene diimide (NDI) units to prepare quantum dot sensitized solar cells (p-QDSSCs) on NiO electrodes. Time-resolved photoluminescence measurements of the PbS emission were used to determine the rate constants for charge transfer from the PbS exciton to the NiO, cobalt based redox mediator and NDI. Notably, it was shown that NDI quenches the PbS exciton by electron transfer with a quite fast rate constant (6.9 x 10 7 s -1 ). The PbS QDs sensitized NiO films were finally used to fabricate solar cells with tris(4,4’-di tert -butyl-2,2’-bipyridine) cobalt(III/II) as redox mediator. It was observed that the presence of NDI on PbS improved the photovoltaic performance by 50% relative to that of cells without NDI, leading to a device with the following characteristics: Jsc = 5.75 mA/cm 2 , Voc = 226 mV, ff = 34% and PCE = 0.44%. This study demonstrates that photogalvanic processes can be a productive pathway to better performing sensitized p-type semiconductor for p-QDSSC. In other words, photoinduced electron transfer from the QDs towards the electrolyte rather than initial photoinduced charge injection into the p-type semiconductor can be a favorable operative mechanism in QD sensitized NiO films and might be exploited further for the construction of better performing solar cells or photocatalytic devices.