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Monroy, E.
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Publications (6/6 displayed)
- 2020InGaN quantum dots studied by correlative microscopy techniques for enhanced light-emitting diodescitations
- 2017P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nmcitations
- 2011InN/GaN heterojunction electrical behavior
- 2011Strain relaxation in GaN/Al0.1Ga0.9N superlattices for mid-infrared intersubband absorptioncitations
- 2010Defect structure in heteroepitaxial semipolar (11¯22) (Ga, Al)N
- 2002Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al 0.31 Ga 0.69 Ncitations
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article
P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm
Abstract
We report the influence of the In mole fraction on the material and electrical characteristics of p-i-n InxGa1−xN homojunctions (x=0.10–0.40) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire substrates. Junctions terminated with p-InGaN present improved carrier extraction efficiency in comparison with devices capped with p-GaN, due to the deleterious effect of polarization discontinuities on the device performance. We demonstrate that the presence of Mg does not perturb the In incorporation in InGaN, and it leads to a significant reduction of the stacking fault density. p-In0.3Ga0.7N layers with a hole concentration of 3.2×1018 cm−3 are demonstrated. InGaN homojunction devices show a peak EQE=14±2% in the blue-to-orange spectral region, and an extended cutoff to 600 nm.