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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Ozanne, F.
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Publications (3/3 displayed)
- 2016understanding the role of mobility of ito films for silicon heterojunction solar cell applicationscitations
- 2013strategies of cost reduction and high performance on a si h c si heterojunction solar cells 21 efficiency on monolike substratecitations
- 2012key aspects on development of high efficiency heterojunction and ibc heterojunction solar cells towards 22 efficiency on industrial size
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understanding the role of mobility of ito films for silicon heterojunction solar cell applications
Abstract
ransparent conducting oxides (TCO) are crucial in amorphous/crystalline silicon heterojunction solar cells performance as they have to be highly conductive to ensure the transport of photogenerated charges while remaining highly transparent to the sun spectrum. The key parameter to improve the transparency/conductivity compromise of TCO is mobility, since it allows increasing conductivity without losing transparency in the infrared region. A deep understanding of the factors influencing the mobility is then fundamental, and this is the objective of this paper. For this study, thin films of tin-doped indium oxide (ITO) were prepared by magnetron sputtering with different oxygen content. They were deeply characterized by standard and Low Temperature Hall Effect measurement, scanning and transmission electron microscopy and X-ray diffraction. The impact of oxygen on the microstructure was studied and the electrical properties were deeply investigated. In particular, the different mechanisms impacting the mobility were quantified as a function of oxygen content during ITO deposition.