| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Qu, Yongtao
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2023A structural, optical and electrical comparison between physical vapour deposition and slot-die deposition of Al:ZnO (AZO)
- 2022Elimination of the carbon-rich layer in Cu2ZnSn(S, Se)4 absorbers prepared from nanoparticle inkscitations
- 2022Routes to Increase Performance for Antimony Selenide Solar Cells using Inorganic Hole Transport Layerscitations
- 2022Ex-situ Ge-doping of CZTS Nanocrystals and CZTSSe Solar Absorber Filmscitations
- 2022Ex situ Ge-doping of CZTS nanocrystals and CZTSSe solar absorber films.citations
- 2022Recovery mechanisms in aged kesterite solar cellscitations
- 2020Innovative fabrication of low-cost kesterite solar cells for distributed energy applications
- 2019Solution processing route to Na incorporation in CZTSSe nanoparticle ink solar cells on foil substratecitations
- 2018Photovoltaic performance of CdS/CdTe junctions on ZnO nanorod arrayscitations
- 2016Selenization kinetics inCu2ZnSn(S,Se)4 solar cells prepared from nanoparticle inkscitations
- 2016The role of nanoparticle inks in determining the performance of solution processed Cu2ZnSn(S,Se)4thin film solar cellscitations
Places of action
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article
Selenization kinetics inCu2ZnSn(S,Se)4 solar cells prepared from nanoparticle inks
Abstract
Earth-abundant Cu2ZnSn(S,Se)4 (CZTSSe) thin film photovoltaic absorber layers are fabricated by annealing Cu2ZnSnS4 (CZTS) nanoparticle thin films in a selenium rich atmosphere. Systematic variation of the selenization time (5, 10, 20 and 40 min) and temperature (450, 500, 550 and 600 °C) provides insight into the kinetics of the selenization process and in particular recrystallization and grain growth. Se–S anion exchange is found to follow Avrami׳s model in which the CZTS selenization is controlled by an irregular one-dimensional process limited by metal cation re-ordering and grain boundary migration. CZTSSe grain growth is observed to follow a normal relation with a grain growth exponent close to the ideal case of equiaxed grains and the grain boundary migration energy is calculated to be 85.38 kJ/mol. These selenization variables have a fundamental influence on the quality of the resulting CZTSSe thin film and consequently the device performance. A peak device solar energy conversion efficiency of 5.4% was obtained for selenization at 500 °C for 20 min. The device efficiency was found to be highly sensitive to these variables and it is critical to obtain an appropriate balance between grain growth and thin film quality.