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Bullock, James
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article
Passivated contacts to laser doped p+ and n+ regions
Abstract
<p>In this work, tunnel SiO<sub>2</sub>/a-Si:H stacks are trialed as passivated contacts to laser doped p<sup>+</sup> and n<sup>+</sup> regions. The passivation performance and contact resistivity are investigated as a function of the tunnel SiO<sub>2</sub> thickness and annealing condition. We find that the SiO<sub>2</sub>/a-Si:H stack provides excellent passivation to laser doped n<sup>+</sup> regions, with corresponding low recombination current density (J<sub>o</sub>) values. A lower level of surface passivation is achieved by the SiO<sub>2</sub>/a-Si:H stack on laser doped p<sup>+</sup> regions. A post-deposition forming gas anneal (FGA) at 400 °C is found to improve the passivation performance to laser doped p<sup>+</sup> regions and deteriorate the passivation to laser doped n<sup>+</sup> regions. Acceptable contact resistivity (ρ<sub>c</sub>) values have been obtained for both laser doped n<sup>+</sup> and p<sup>+</sup> regions after aluminum metallization and a post FGA to activate the alloying process between the a-Si:H and aluminum layer. In the final part of this work implementation of the passivated contacts to laser doped regions into a simplified interdigitated back-contact (IBC) solar cell fabrication process is proposed. Simulation result suggests that IBC device with an efficiency of up to 23% can be achieved using the obtained experimental results.</p>