| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kleider, Jean-Paul
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (28/28 displayed)
- 2024Surface photovoltage study of perovskite materials and structures for solar cell applications
- 2024Three Terminal Organic-Silicon Tandem Models
- 2023Elucidating Interfacial Limitations Induced by Tin Oxide Electron Selective Layer Grown by Atomic Layer Deposition in N−I−P Perovskite-Based Solar Cellscitations
- 2023The modulated photoluminescence technique versus temperature: opportunities for better determination of trap parameters
- 2022Characterization of semiconductors from photoconductivity techniques: uniform and polychromatic illumination
- 2022Surface photovoltage study of metal halide perovskites deposited directly on crystalline silicon
- 2022Surface photovoltage characterisation of metal halide perovskite on crystalline silicon using Kelvin probe force microscopy and metal-insulator-semiconductor configurationcitations
- 2021Evolution of the surface passivation mechanism during the fabrication of ex-situ doped poly-Si(B)/SiOx passivating contacts for high-efficiency c-Si solar cellscitations
- 2021Evolution of the surface passivation mechanism during the fabrication of ex-situ doped poly-Si(B)/SiOx passivating contacts for high-efficiency c-Si solar cellscitations
- 2021Carrier gradients and the role of charge selective contacts in lateral heterojunction all back contact perovskite solar cellscitations
- 2021Space charge capacitance study of GaP/Si multilayer structures grown by plasma depositioncitations
- 2021Surface photovoltage characterisation of metal halide perovskite on c-SI using kelvin probe force microscopy and metal-insulator-semiconductor configuration
- 2019Heteroepitaxial growth of silicon on GaAs via low-temperature plasma-enhanced chemical vapor depositioncitations
- 2019Building blocks development for defect-free growth of GaAs on silicon for tandem solar cells
- 2019SiOxNy:B layers for ex-situ doping of hole-selective poly silicon contacts: A passivation studycitations
- 2018Conductivity and Surface Passivation Properties of Boron‐Doped Poly‐Silicon Passivated Contacts for c‐Si Solar Cellscitations
- 2018Heteroepitaxial growth of Silicon on GaAs via low temperature plasma-enhanced chemical vapor deposition
- 2018Improvement of the conductivity and surface passivation properties of boron-doped poly-silicon on oxidecitations
- 2017Coupling Optical and Electrical Modelling for the study of a-Si:H-based nanowire Array Solar Cellscitations
- 2017Coupling Optical and Electrical Modelling for the study of a-Si:H-based nanowire Array Solar Cellscitations
- 2017Influence of PE-ALD of GaP on the Silicon Wafers Qualitycitations
- 2015Revisiting the theory and usage of junction capacitance: Application to high efficiency amorphous/crystalline silicon heterojunction solar cellscitations
- 2013n-type a-Si:H layers applied to the back side of heterojunction solar cells: Experimental and simulation analysiscitations
- 2013n-type a-Si:H layers applied to the back side of heterojunction solar cells: Experimental and simulation analysiscitations
- 2012Amorphous silicon diamond based heterojunctions with high rectification ratiocitations
- 2012Nanowire solar cells using hydrogenated amorphous silicon: a modeling studycitations
- 2009An intelligent measurement system for diagnosing of semi-insulating materials by photoinduced transient spectroscopy
- 2007Scaling analysis of field-enhanced bandtail hopping transport in amorphous carbon nitridecitations
Places of action
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article
Revisiting the theory and usage of junction capacitance: Application to high efficiency amorphous/crystalline silicon heterojunction solar cells
Abstract
We briefly review the basic concepts of junction capacitance and the peculiarities related to amorphous semiconductors, paying tribute to Cohen and to his pioneering work. We extend the discussion to very high efficiency silicon heterojunction (SiHET) solar cells where both an amorphous semiconductor, namely hydrogenated amorphous silicon, and heterojunctions are present. By presenting both modeling and experimental results, we demonstrate that the conventional theory of junction capacitance based on the depletion approximation in the space charge region, cannot reproduce the capacitance data obtained on SiHET cells. The experimental temperature dependence is significantly stronger than that of the depletion-layer capacitance, while the bias dependence yields underestimated values of the diffusion potential, leading to strong errors if applied to the determination of band offsets using the procedure proposed precedingly in the literature. We demonstrate that this is not related to the amorphous nature of a-Si:H, but to the existence of a strongly inverted c-Si surface layer that requires minority carriers to be taken into account in the analysis of the junction capacitance.