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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Coignus, J.
CEA LETI
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (4/4 displayed)
- 2021Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf 0.5 Zr 0.5 O 2 and Si:HfO 2 -based MFM capacitorscitations
- 2013n-type a-Si:H layers applied to the back side of heterojunction solar cells: Experimental and simulation analysiscitations
- 2013n-type a-Si:H layers applied to the back side of heterojunction solar cells: Experimental and simulation analysiscitations
- 2012key aspects on development of high efficiency heterojunction and ibc heterojunction solar cells towards 22 efficiency on industrial size
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article
n-type a-Si:H layers applied to the back side of heterojunction solar cells: Experimental and simulation analysis
Abstract
In this work, we focus on the comprehension and optimization of the rear side of n-type amorphous/crystalline (a-Si:H/c-Si) heterojunction solar cells. The back amorphous stack and the role of the heterointerface have been investigated in order to elucidate the basic mechanisms governing device performance. Thus, thin amorphous silicon films with different phosphorous contents have been deposited by PECVD and extensively characterised (optical, electrical, and structural properties have been studied). Moreover, the passivation and the interface properties of such different a-Si:H thin films on crystalline silicon surface have been also investigated by Quasi-Steady-State Photoconductance (QSSPC) measurements. The effect of the doping content of the amorphous back-surface-field was deeply analysed and simulated in order to explain the observed tendencies on solar cell precursors. The influence of defect density and activation energy on the carrier transport properties varying with the doping of thin a-Si:H layers has been widely investigated. Furthermore, optimized heterojunction solar cells have been fabricated and an efficiency of 20.5% on n-type 148 cm2 silicon wafer has been achieved.