| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Durose, Ken
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2021Identification of lead vacancy defects in lead halide perovskitescitations
- 2020Single-junction solar cells based on p-i-n GaAsSbN heterostructures grown by liquid phase epitaxycitations
- 2020Vacancy-Ordered Double Perovskite Cs2TeI6 Thin Films for Optoelectronics
- 2019Chemical etching of Sb2Se3 solar cells: surface chemistry and back contact behaviourcitations
- 2019Chemical etching of Sb2Se3 solar cellscitations
- 2018Self-catalyzed CdTe wirescitations
- 2010Control of grain size in sublimation-grown CdTe, and the improvement in performance of devices with systematically increased grain sizecitations
- 2009Impedance spectroscopy of thin-film CdTe/CdS solar cells under varied illuminationcitations
Places of action
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article
Control of grain size in sublimation-grown CdTe, and the improvement in performance of devices with systematically increased grain size
Abstract
A method to control the grain size of CdTe thin films deposited by close space sublimation using chamber pressure is demonstrated. Grain diameter is shown to increase in the pressure range 2–200 Torr, following the linear relationship D (?m)=0.027×P (Torr)+0.90. A mechanism is proposed to explain the dominance of the 111 preferred orientation in the small-grained, but not the large-grained films. For a series of CdTe/CdS solar cells in which the only variable was grain size, the performance parameters were seen to increase from 0.54% (0.94 ?m grains) up to a plateau of 11.3% (?3.6 ?m grains). This corresponds to the point at which the series resistance is no longer dominated by grain boundaries, but by the contacts.