| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Raniero, Leandro
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2008Crystallization of amorphous indium zinc oxide thin films produced by radio-frequency magnetron sputteringcitations
- 2008Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applicationscitations
- 2007Amorphous/nanocrystalline silicon biosensor for the specific identification of unamplified nucleic acid sequences using gold nanoparticle probescitations
- 2006Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devicescitations
- 2006Characterization of nanocrystalline silicon carbide filmscitations
- 2006Electrical properties of amorphous and nanocrystalline hydrogenated silicon films obtained by impedance spectroscopycitations
- 2006Performances of an in-line PECVD system used to produce amorphous and nanocrystalline silicon solar cellscitations
- 2005Role of buffer layer on the performances of amorphous silicon solar cells with incorporated nanoparticles produced by plasma enhanced chemical vapor deposition at 27.12 MHzcitations
- 2005Study of a-SiC : H buffer layer on nc-Si/a-Si : H solar cells deposited by PECVD technique.citations
- 2004Characterization of silicon carbide thin films prepared by VHF-PECVD technologycitations
Places of action
| Organizations | Location | People |
|---|
article
Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applications
Abstract
Transparent and highly conducting gallium zinc oxide (GZO) films were successfully deposited by RF sputtering at room temperature. A lowest resistivity of ∼2.8×10−4 Ω cm was achieved for a film thickness of 1100 nm (sheet resistance ∼2.5 Ω/□), with a Hall mobility of 18 cm2/V s and a carrier concentration of 1.3×1021 cm−3. The films are polycrystalline with a hexagonal structure having a strong crystallographic c-axis orientation. A linear dependence between the mobility and the crystallite size was obtained. The films are highly transparent (between 80% and 90% including the glass substrate) in the visible spectra with a refractive index of about 2, very similar to the value reported for the bulk material. These films were applied to single glass/TCO/pin hydrogenated amorphous silicon solar cells as front layer contact, leading to solar cells with efficiencies of about 9.52%. With the optimized deposition conditions, GZO films were also deposited on polymer (PEN) substrates and the obtained results are discussed.