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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Almeida-Didry, Sonia De
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Publications (5/5 displayed)
- 2023On Recent Progress on Core Shell Nanostructures of Colossal Permittivity Materials for Capacitors: Synthesis and Dielectric Properties
- 2019Comparison of colossal permittivity of CaCu3Ti4O12 with commercial grain boundary barrier layer capacitorcitations
- 2018Control of grain boundary in alumina doped CCTO showing colossal permittivity by core-shell approachcitations
- 2015Capacitance Scaling of Grain Boundaries with Colossal Permittivity of CaCu3Ti4O12-Based Materialscitations
- 2014Leading Role of Grain Boundaries in Colossal Permittivity of Doped and Undoped CCTOcitations
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article
Comparison of colossal permittivity of CaCu3Ti4O12 with commercial grain boundary barrier layer capacitor
Abstract
The properties of a commercial grain boundary barrier layer (GBBL) SrTiO3-based capacitor are analyzed in terms of capacitance C and resistivity R of two RC elements, one for grains and one for grain boundaries. Results are compared with those of CaCu3Ti4O12 (CCTO) samples showing giant permittivity, measured in the same conditions and analyzed with the same method. All CCTO samples investigated here show higher permittivity than GBBL. This is shown to be related to a higher capacitance of the grain boundaries. However, the electric losses of CCTO measured via conventional tan(δ) are found significantly higher. They are related to a resistivity of the grain boundaries lower than in GBBL capacitor. A better control of the grain boundaries in CCTO possibly via a core-shell synthesis described here, followed by thermal post treatments under a controlled atmosphere as it is performed for GBBL capacitors, is suggested to improve the resistance of CCTO dielectrics.