| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Smazna, D.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2019Tailored crystalline width and wall thickness of an annealed 3D carbon foam composites and its mechanical propertycitations
- 2018Fundamentals of the temperature-dependent electrical conductivity of a 3D carbon foam—Aerographitecitations
- 2017Enhancing the conductivity of ZnO micro- and nanowire networks with gallium oxidecitations
- 2017Morphology dependent UV photoresponse of Sn-doped ZnO microstructurescitations
- 2017Hybridization of zinc oxide tetrapods for selective gas sensing applicationscitations
- 2017Functional NiTi grids for in situ straining in the TEMcitations
- 2016Electrical and thermal conductivity of aerogel/epoxy composites
- 2016Photocatalytic applications of doped zinc oxide porous films grown by magnetron sputtering
Places of action
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article
Morphology dependent UV photoresponse of Sn-doped ZnO microstructures
Abstract
<p>In this work, the UV sensing properties of Sn-doped and/or alloyed zinc oxide (ZnO) microstructures with different morphologies were investigated in order to elaborate the high performance UV photodetectors. We have compared two types of morphologies, i.e. Sn-doped ZnO films (ZnO:Sn) and ZnO microtetrapod (T) networks alloyed- and doped-with Sn (ZnO-T:Sn). The UV response (I<sub>UV</sub>/I<sub>dark</sub>) of ZnO:Sn is about 10<sup>3</sup> and 10<sup>2</sup> for 0.1 and 0.4 at% Sn, respectively. The three-dimensional highly porous ZnO-T:Sn networks demonstrated higher UV response (by two orders of magnitude) and much faster recovery for detection of UV light, which were attributed to the domination of fast processes such as modulation of potential barriers formed at the interface of the tetrapod arms, which are less dependent on adsorbed species. Thus, the UV response for devices with a distance between the pads (interelectrode distance) of about 60, 400, 800 and 1500 μm is 1.7 × 10<sup>5</sup>, 2.4 × 10<sup>4</sup>, 6.7 × 10<sup>3</sup> and 925, respectively. All samples demonstrated a sharp increase in photocurrent under illumination with UV light, as well as a fast recovery to the initial electrical baseline. Also, the influence of relative humidity on the rapidity of photodetectors based on ZnO:Sn films and ZnO-T:Sn networks was investigated, confirming a low impact on the rapidity of ZnO-T:Sn networks, with good repeatability and stable electrical baseline, which is very important for effective applications.</p>