| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Durose, Ken
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Topics
Publications (8/8 displayed)
- 2021Identification of lead vacancy defects in lead halide perovskitescitations
- 2020Single-junction solar cells based on p-i-n GaAsSbN heterostructures grown by liquid phase epitaxycitations
- 2020Vacancy-Ordered Double Perovskite Cs2TeI6 Thin Films for Optoelectronics
- 2019Chemical etching of Sb2Se3 solar cells: surface chemistry and back contact behaviourcitations
- 2019Chemical etching of Sb2Se3 solar cellscitations
- 2018Self-catalyzed CdTe wirescitations
- 2010Control of grain size in sublimation-grown CdTe, and the improvement in performance of devices with systematically increased grain sizecitations
- 2009Impedance spectroscopy of thin-film CdTe/CdS solar cells under varied illuminationcitations
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article
Single-junction solar cells based on p-i-n GaAsSbN heterostructures grown by liquid phase epitaxy
Abstract
In this paper, we present single heterojunction p-i-n GaAsSbN/GaAs solar cells grown by low-temperature liquid-phase epitaxy (LPE) – this is of interest as a component of multi-junction solar cell devices. The quaternary absorber layer was characterized by low excitation power photoluminescence to give the temperature dependence of the bandgap. This conformed to the Varshni function at low temperatures to within 10 meV, indicating relatively small alloy potential fluctuations. The absorption properties and the transport of the photogenerated carriers in the heterostructures were investigated using surface photovoltage method. A power conversion efficiency of 4.15% (AM1.5, 1000 W·m−2) was measured for p-i-n GaAsSbN/GaAs solar cells, which is comparable to the efficiency of MOCVD grown devices of this type. This is promising for the first report of LPE grown GaAsSbN/GaAs solar cells since the current record efficiency for the cells based on these compounds grown by MBE stands just at 6%. The long-wavelength photosensitivity of the cells determined from external quantum efficiency and surface photovoltage measurements was shown to be extended to 1040 nm.