| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Hutter, Os
Northumbria University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2023Photonic Curing for Emerging Photovoltaic Absorbers
- 2022Sodium Fluoride Doping Approach to CdTe Solar Cellscitations
- 2022Routes to Increase Performance for Antimony Selenide Solar Cells using Inorganic Hole Transport Layerscitations
- 2022Defect engineering in antimony selenide thin film solar cellscitations
- 2022Exploring the Role of Temperature and Hole Transport Layer on the Ribbon Orientation and Efficiency of Sb2Se3 cells Deposited via Thermal Evaporation
- 2020Single-junction solar cells based on p-i-n GaAsSbN heterostructures grown by liquid phase epitaxycitations
- 2020Natural Band Alignments and Band Offsets of Sb2Se3 Solar Cellscitations
- 2019Chemical etching of Sb2Se3 solar cellscitations
- 2018Self-catalyzed CdTe wirescitations
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article
Single-junction solar cells based on p-i-n GaAsSbN heterostructures grown by liquid phase epitaxy
Abstract
In this paper, we present single heterojunction p-i-n GaAsSbN/GaAs solar cells grown by low-temperature liquid-phase epitaxy (LPE) – this is of interest as a component of multi-junction solar cell devices. The quaternary absorber layer was characterized by low excitation power photoluminescence to give the temperature dependence of the bandgap. This conformed to the Varshni function at low temperatures to within 10 meV, indicating relatively small alloy potential fluctuations. The absorption properties and the transport of the photogenerated carriers in the heterostructures were investigated using surface photovoltage method. A power conversion efficiency of 4.15% (AM1.5, 1000 W·m−2) was measured for p-i-n GaAsSbN/GaAs solar cells, which is comparable to the efficiency of MOCVD grown devices of this type. This is promising for the first report of LPE grown GaAsSbN/GaAs solar cells since the current record efficiency for the cells based on these compounds grown by MBE stands just at 6%. The long-wavelength photosensitivity of the cells determined from external quantum efficiency and surface photovoltage measurements was shown to be extended to 1040 nm.