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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Mendes, Manuel Joao
Universidade Nova de Lisboa
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2024Aerogel cathodes for electrochemical CO2 reduction [Comunicação oral]
- 2024Thermal-Carrier-Escape Mitigation in a Quantum-Dot-In-Perovskite Intermediate Band Solar Cell via Bandgap Engineeringcitations
- 2024Surface modification of halide perovskite using EDTA-complexed SnO2 as electron transport layer in high performance solar cellscitations
- 2023Sub-Bandgap Sensitization of Perovskite Semiconductors via Colloidal Quantum Dots Incorporationcitations
- 2023Parylene-Sealed Perovskite Nanocrystals Down-Shifting Layer for Luminescent Spectral Matching in Thin Film Photovoltaicscitations
- 2023Thermal-Carrier-Escape Mitigation in a Quantum-Dot-In-Perovskite Intermediate Band Solar Cell via Bandgap Engineeringcitations
- 2022Copper-Arsenic-Sulfide Thin-Films from Local Raw Materials Deposited via RF Co-Sputtering for Photovoltaicscitations
- 2022Observation of Grain Boundary Passivation and Charge Distribution in Perovskite Films Improved with Anti-solvent Treatmentcitations
- 2020Photonic-structured TCO front contacts yielding optical and electrically enhanced thin-film solar cellscitations
- 2019All-Thin-Film Perovskite/C-Si Four-Terminal Tandems: Interlayer and Intermediate Contacts Optimizationcitations
- 2019Wave-optical front structures on silicon and perovskite thin-film solar cellscitations
- 2019Lightwave trapping in thin film solar cells with improved photonic-structured front contactscitations
- 2019Photonic-structured TiO 2 for high-efficiency, flexible and stable Perovskite solar cellscitations
- 2018Passivation of Interfaces in Thin Film Solar Cells: Understanding the Effects of a Nanostructured Rear Point Contact Layercitations
- 2018Ultra-fast plasmonic back reflectors production for light trapping in thin Si solar cellscitations
- 2017Low-temperature spray-coating of high-performing ZnOcitations
- 2016Influence of the Substrate on the Morphology of Self-Assembled Silver Nanoparticles by Rapid Thermal Annealingcitations
- 2014Broadband photocurrent enhancement in a-Si:H solar cells with plasmonic back reflectorscitations
Places of action
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article
Ultra-fast plasmonic back reflectors production for light trapping in thin Si solar cells
Abstract
<p>A fast method is presented to fabricate plasmonic light trapping structures in just ten minutes (>5 × faster than the present state of art), with excellent light scattering properties. The structures are composed of silver nanoparticles (Ag NPs) deposited by thermal evaporation and self-assembled using a rapid thermal annealing (RTA) system. The effect of the RTA heating rate on the NPs production reveals to be crucial to the decrease of the annealing process. The Ag NPs are integrated in thin film silicon solar cells to form a plasmonic back reflector (PBR) that causes a diffused light reflectivity in the near-infrared (600–1100 nm wavelength region). In this configuration the thicknesses of the AZO spacer/passivating layers between NPs and rear mirror, and between NPs and silicon layer, play critical roles in the near-field coupling of the reflected light towards the solar cell absorber, which is investigated in this work. The best spacer thicknesses were found to be 100 and 60 nm, respectively, for Ag NPs with preferential sizes of about 200 nm. The microcrystalline silicon (μc-Si:H) solar cells deposited on such improved PBR demonstrate an overall 11% improvement on device efficiency, corresponding to a photocurrent of 24.4 mA/cm<sup>2</sup> and an efficiency of 6.78%, against 21.79 mA/cm<sup>2</sup> and 6.12%, respectively, obtained on flat structures without NPs.</p>