693.932 PEOPLE
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Hahn, Giso
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (87/87 displayed)
- 2024PECVD SixCy as Barrier Layer Against Aluminum in Solar Cells With poly-Si/SiOx Passivating Contacts
- 2023Fundamental microscopic studies on the etching behavior of silver pastes on poly-Si/SiO x passivating contactscitations
- 2022Contact Formation of Silver Paste and Atmospheric Pressure Chemical Vapor Deposition (n) Poly-Silicon Passivating Contacts on Planar and Textured Surfacescitations
- 2019GD-OES depth profiling and calibration of B doped dielectric layers
- 2019Compensation of the sputter damage during a-Si deposition for poly-Si/SiO x passivating contacts by ex-situ p-dopingcitations
- 2018High-performance p-type multicrystalline silicon (mc-Si)citations
- 2018Gettering efficacy of diffusion processes based on doped APCVD glassescitations
- 2018Electrically-inactive phosphorus re-distribution during low temperature annealingcitations
- 2018On the characteristics of the doping profile under local metal contacts
- 2017Impact of Extended Contact Cofiring on Multicrystalline Silicon Solar Cell Parameterscitations
- 2017Impact of extended contact co-firing on multicrystalline silicon solar cell parameterscitations
- 2017Gettering efficacy of APCVD PSG and BSG layers in mc-Si
- 2016Optimizing phosphorus diffusion for photovoltaic applications : Peak doping, inactive phosphorus, gettering, and contact formationcitations
- 2016Characterization of local Al-contacts by light beam induced current measurements and their verification by 2D simulation using flexPDEcitations
- 2016Study on the Characteristics of ICP-PECVD Boron Silicate Glasses Dependent on Diborane Fluxcitations
- 2016Contacting BBr 3 -based boron emitters with Aluminium-free screen-printing pastecitations
- 2016Influence of Al Particle Size and Firing Profile on Void Formation in Rear Local Contacts of Silicon Solar Cellscitations
- 2016A 3-in-1 doping process for interdigitated back contact solar cells exploiting the understanding of co-diffused dopant profiles by use of PECVD borosilicate glass in a phosphorus diffusioncitations
- 2016Influence of post-hydrogenation upon electrical, optical and structural properties of hydrogen-less sputter-deposited amorphous siliconcitations
- 2016Influence of Contact Firing Conditions on the Characteristics of bi-facial n-type Silicon Solar Cells Using Ag/Al Pastescitations
- 2016Optimizing phosphorus diffusion for photovoltaic applications: Peak doping, inactive phosphorus, gettering, and contact formationcitations
- 2016Optimizing phosphorus diffusion for photovoltaic applications: peak doping, inactive phosphorus,gettering, and contact formationcitations
- 2016Capacitance-voltage spectroscopy and analysis of dielectric intrinsic amorphous silicon thin filmscitations
- 2016p + -doping analysis of laser fired contacts for silicon solar cells by Kelvin probe force microscopycitations
- 2015Morphology and Hydrogen in Passivating Amorphous Silicon Layerscitations
- 2015Nondestructive Characterization of Voids in Rear Local Contacts of PERC-Type Solar Cellscitations
- 2015Passivating boron silicate glasses for co-diffused high-efficiency n-type silicon solar cell applicationcitations
- 20153D-FIB Investigation of Cu Precipitates in c-Si after High Temperature Treatments
- 2015Toward High-Efficiency Solution-Processed Planar Heterojunction Sb 2 S 3 Solar Cellscitations
- 2015Void formation on PERC solar cells and their impact on the electrical cell parameters verified by luminescence and scanning acoustic microscope measurementscitations
- 2015Bias-plasma Assisted RF Magnetron Sputter Deposition of Hydrogen-less Amorphous Siliconcitations
- 2014Effect of the crucible and its coating on the red zone in multicrystalline silicon - analysis on solar cell level
- 2014Investigation of Lifetime-Limiting Defects After High-Temperature Phosphorus Diffusion in High-Iron-Content Multicrystalline Siliconcitations
- 2014Effect of oxygen during thermal annealing on the electrical and optical properties of sputter deposited TCO layers for heterojunction solar cell application
- 2014Nondestructive Characterization of Voids in Rear Local Contacts of PERC-Type Solar Cellscitations
- 2014Influence of electrodes' distance upon properties of intrinsic and doped amorphous silicon films for heterojunction solar cellscitations
- 2014Efficacy of Phosphorus Gettering and Hydrogenation in Multicrystalline Siliconcitations
- 2014Temperature dependence of void formation in PERC cells and their spatially resolved detection by combining scanning acoustic microscopy and electroluminescence measurements
- 2014P + Doping Analysis of Laser Fired Contacts by Raman Spectroscopy
- 2013The multi-busbar design : an overviewcitations
- 2013Relationships between diffusion parameters and phosphorus precipitation during the POCl3 diffusion processcitations
- 2013Hydrogen passivation and phosphorous gettering at different grain boundary types in multicrystalline silicon
- 2013Improved iron gettering of contaminated multicrystalline silicon by high temperature phosphorus diffusioncitations
- 2013Towards non-permanent contacting schemes for busbar-free solar cells
- 2013Transition metal precipitates in mc Si : a new detection method using 3D-FIBcitations
- 2013Highly efficient multi-busbar solar cells with Ag nano-particle front side metallization
- 2013Towards an optimized emitter for screen printed solar cellscitations
- 2013Multi-busbar solar cells and modules : high efficiencies and low silver consumptioncitations
- 2013Study on boron emitter formation by BBr 3 diffusion for n-type Si solar cell applications
- 2013Changes in passivation quality of PECV-deposited hydrogenated amorphous silicon layers used in solar cells due to sputter deposition of TCOs
- 2012Review on screen printed metallization on p-type siliconcitations
- 2012Nickel plating on p+ silicon : a characterization of contact resistivity and line resistance
- 2012The corrosive effect of alkaline nickel-phosphorus plating on crystalline silicon
- 2012The European project 20Plµs : 20 percent efficiency on less than 100µm thick industrially feasible crystalline-Si solar cells
- 2012Advances in the understanding of phosphorus silicate glass (PSG) formation for accurate process simulation of phosphorus diffusion
- 2011Influence of the dopant on the contact formation to p+-type siliconcitations
- 2011Impact of metal contamination in silicon solar cellscitations
- 2011Influence of diffusion parameters on electronic quality of multicrystalline silicon
- 2011Influence of defect type on hydrogen passivation efficacy in multicrystalline silicon solar cellscitations
- 2011Passivation of Si wafers by Al2O3 films with different surface conditioningcitations
- 2011The origin of background platingcitations
- 2011Investigation of radiation damage to the Al 2 O 3 /Si wafer interface during electron beam evaporation by means of C-V and lifetime measurements
- 2011Influence of hydrogen on interstitial iron concentration in multicrystalline silicon
- 2011The influence of contact geometry and sub-contact passivation on the performance of screen-printed Al 2 O 3 passivated solar cells
- 2010Impact of defect type on hydrogen passivation effectiveness in multicrystalline silicon solar cellscitations
- 2010μXRF investigations on the influence of solar cell processing steps on iron and copper precipitates in multicrystalline siliconcitations
- 2010Status of selective emitter technology
- 2010Electroless nickel and copper metallization : Contact formation on crystalline silicon and background plating behavior on PECVD silicon SiN x :H layers
- 2010Comparison of UMG materials : are ingot height independent solar cell efficiencies possible?
- 2010Enabling dielectric rear side passivation for industrial mass production by developing lean printing-based solar cell processescitations
- 2010Dielectric rear side passivation on Ribbon Growth on Substrate (RGS) solar cells
- 2010Large area solar cells made from degradation-free, low resistivity gallium doped Cz wafers
- 2010Quantitative evaluation of grain boundary activity in multicrystalline semiconductors by light beam induced current : an advanced modelcitations
- 2009The optimal choice of the doping levels in an inline selective emitter design for screen printed multicrystalline silicon solar cells
- 2009Large area solar cells with screen printed front side metallization and dielectric rear side passivation
- 2009Comparison of buried contact- and screen printed 100% UMG solar cells resulting in 16.2% efficiency
- 2009Reducing the impact of metal impurities in block-cast mc Silicon
- 2009Evaluation of processing steps regarding lifetime of iron/copper contaminated mc Si wafers
- 2008Minimizing the electrical losses on the front side: development of a selective emitter process from a single diffusioncitations
- 2008Screen printed EWT cells : limitations and alternative approaches to the manufacturing process
- 2008Towards higher efficiencies for crystalline silicon solar cells using SiC layers
- 2008Minority carrier lifetime monitoring in a buried contact solar cells process using MC-SI
- 2008Selective Emitter for Industrial Solar Cell Production : A Wet Chemical Approach Using a Single Side Diffusion Process
- 2006Record 13% efficiency screen printed silicon solar cells on ribbon growth on substrate (RGS) material
- 2006Progress in hydrogenation of multicrystalline silicon solar cells
- 2003Assessing the role of transition metals in shunting mechanisms using synchrotron-based techniques
- 2003Record efficiency of 16.7% in EFG ribbon silicium
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article
High-performance p-type multicrystalline silicon (mc-Si)
Abstract
<p>Recent progress in the electronic quality of high-performance (HP) multicrystalline silicon material is reported with measurements and modeling performed at various institutions and research groups. It is shown that recent progress has been made in the fabrication at Trina Solar mainly by improving the high excess carrier lifetimes τ due to a considerable reduction of mid-gap states. However, the high lifetimes in the wafers are still reduced by interstitial iron by a factor of about 10 at maximum power point (mpp) conditions compared to mono-crystalline Cz wafers of equivalent resistivity. The low lifetime areas of the wafers seem to be limited by precipitates, most likely Cu. Through simulations, it appears that dislocations reduce cell efficiency by about 0.25% absolute. The best predictors for PERC cell efficiency from ingot metrology are a combination of mean lifetime and dislocation density because dislocations cannot be improved considerably by gettering during cell processing, while lifetime-limiting impurities are gettered well. In future, the material may limit cell efficiency above about 22.5% if the concentrations of Fe and Cu remain above 10<sup>10</sup> and 10<sup>13</sup> cm<sup>−3</sup>, respectively, and if dislocations are not reduced further.</p>