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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Hagendorf, Christian
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2024Interface Engineering in All-Oxide Photovoltaic Devices Based on Photoferroelectric BiFe0.9Co0.1O3 Thin Films
- 2023Minimizing electro-optical losses of ITO layers for monolithic perovskite silicon tandem solar cellscitations
- 2023Microscopic Origins of Contact Deterioration During Annealing of Silicon Heterojunction Solar Cell Contactscitations
- 2023Ultrawide bandgap willemite-type Zn<sub>2</sub>GeO<sub>4</sub> epitaxial thin filmscitations
- 2023Design and application of a linear acceleration test setup for defect diagnostics in high-throughput transportation systems
- 2023Enhancement of NiOx/Poly-Si Contact Performance by Insertion of an Ultrathin Metallic Ni Interlayercitations
- 2022Abrasion testing of anti-reflective coatings under various conditionscitations
- 2022Interfacial Oxides at Metal/TCO Junctions and Ultra-Low Contact Resistivity Determination by Micro Transfer Length Measurements Based on Selective Laser Ablationcitations
- 2020Impact of Samarium on the growth of epitaxial Bismuth ferrite thin films
- 2020Impact of Samarium on the Growth of Epitaxial Bismuth Ferrite Thin Filmscitations
- 2018High-performance p-type multicrystalline silicon (mc-Si)citations
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article
High-performance p-type multicrystalline silicon (mc-Si)
Abstract
<p>Recent progress in the electronic quality of high-performance (HP) multicrystalline silicon material is reported with measurements and modeling performed at various institutions and research groups. It is shown that recent progress has been made in the fabrication at Trina Solar mainly by improving the high excess carrier lifetimes τ due to a considerable reduction of mid-gap states. However, the high lifetimes in the wafers are still reduced by interstitial iron by a factor of about 10 at maximum power point (mpp) conditions compared to mono-crystalline Cz wafers of equivalent resistivity. The low lifetime areas of the wafers seem to be limited by precipitates, most likely Cu. Through simulations, it appears that dislocations reduce cell efficiency by about 0.25% absolute. The best predictors for PERC cell efficiency from ingot metrology are a combination of mean lifetime and dislocation density because dislocations cannot be improved considerably by gettering during cell processing, while lifetime-limiting impurities are gettered well. In future, the material may limit cell efficiency above about 22.5% if the concentrations of Fe and Cu remain above 10<sup>10</sup> and 10<sup>13</sup> cm<sup>−3</sup>, respectively, and if dislocations are not reduced further.</p>