| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Van De Kruijs, Robbert
University of Twente
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (22/22 displayed)
- 2024Structural pathways for ultrafast melting of optically excited thin polycrystalline Palladium filmscitations
- 2024Oxidation of thin film binary entropy alloys
- 2022Relation between composition and fracture strength in off-stoichiometric metal silicide free-standing membranescitations
- 2022Fracture Toughness of Free-Standing ZrSiₓ Thin Films Measured Using Crack-on-a-Chip Methodcitations
- 2021Strengthening ultrathin Si3N4 membranes by compressive surface stresscitations
- 2021Hydrogen etch resistance of aluminium oxide passivated graphitic layerscitations
- 2018Damage accumulation in thin ruthenium films induced by repetitive exposure to femtosecond XUV pulses below the single-shot ablation thresholdcitations
- 2017In-vacuo growth studies and thermal oxidation of ZrO2 thin films
- 2017In vacuo low-energy ions scattering studies of ZrO2 growth by magnetron sputtering
- 2017Detection of defect populations in superconductor boron subphosphide B12P2 through X-ray absorption spectroscopycitations
- 2016In-vacuo growth studies of ZrO2 thin films
- 2016Structure of high-reflectance La/B-based multilayer mirrors with partial La nitridationcitations
- 2016Growth kinetics of Ru on Si, SiN and SiO2 studied by in-vacuo low energy ion scattering (LEIS)
- 2016Exploiting the P L2,3 absorption edge for optics: spectroscopic and structural characterization of cubic boron phosphide thin filmscitations
- 2015Determination of oxygen diffusion kinetics during thin film ruthenium oxidationcitations
- 2014Subwavelength single layer absorption resonance antireflection coatingscitations
- 2013Engineering optical constants for broadband single layer anti-reflection coatings
- 2012Chemical interactions at the interfaces of Mo/B4C/Si/B4C multilayers upon low-temperature annealing
- 2012Multilayer development for the generation beyond EUV: 6.x nm
- 2010Enhanced diffusion upon amorphous-to-nanocrystalline phase transition in Mo/B4C/Si layered systemscitations
- 2009In-depth agglomeration of d-metals at Si-on-Mo interfacescitations
- 2009Chemically mediated diffusion of d-metals and B through Si and agglomeration at Si-on-Mo interfacescitations
Places of action
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article
Strengthening ultrathin Si3N4 membranes by compressive surface stress
Abstract
In this work, the effect of compressive surface stress on thin film membrane fracture was studied by bulge test. In order to create membranes with compressive residual stress at the surface, low-pressure chemical vapor deposition (LPCVD) Si3N4 membranes were coated with a 1-8 nm compressive SiNx adlayer or subjected to Ar-ion bombardment. Fracture strength analysis, done using finite element method and Weibull distribution, and microscope inspection of failed membranes showed that the pressure limit of the membranes is determined by the intrinsic fracture mode, caused by high stress induced at the membrane edge near the top surface. By creating compressive residual stress at the membrane surface, the maximum stress induced by the applied pressure was reduced and the fracture strength of the Si3N4 was increased from 17.3 GPa to 18.3 GPa. As a result, membranes with a compressive surface showed a 50% increase in pressure limit, from 5 kPa/nm to 7.5 kPa/nm.