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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Zakharov, A. A.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2023Bottom-Up Growth of Monolayer Honeycomb SiCcitations
- 2023Bottom-Up Growth of Monolayer Honeycomb SiCcitations
- 2020High-Mobility Epitaxial Graphene on Ge/Si(100) Substratescitations
- 2018Fabrication of topographically microstructured titanium silicide interface for advanced photonic applicationscitations
- 2016Fabrication of topographically microstructured titanium silicide interface for advanced photonic applicationscitations
- 2016Surface development of an aluminum brazing sheet during heating studied by XPEEM and XPScitations
- 2015Simultaneous spectroscopic, diffraction and microscopic study of the metal-insulator transition of VO2citations
- 2015Simultaneous spectroscopic, diffraction and microscopic study of the metal-insulator transition of VO 2citations
- 2011Large area quasi-free standing monolayer graphene on 3C-SiC(111)citations
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article
Fabrication of topographically microstructured titanium silicide interface for advanced photonic applications
Abstract
We present a widely scalable, high temperature post-growth annealing method for converting ultra-thin films of TiO2 grown by atomic layer deposition to topographically microstructured titanium silicide (TiSi). The photoemission electron microscopy results reveal that the transformation from TiO2 to TiSi at 950 °C proceeds via island formation. Inside the islands, TiO2 reduction and Si diffusion play important roles in the formation of the highly topographically microstructured TiSi interface with laterally nonuniform barrier height contact. This is advantageous for efficient charge transfer in Si-based heterostructures for photovoltaic and photoelectrochemical applications.