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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Jouen, Samuel
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2021Influence of Sulfur and Water Vapor on High-Temperature Oxidation Resistance of an Alumina-Forming Austenitic Alloycitations
- 2021Influence of strain rate and Sn in solid solution on the grain refinement and crystalline defect density in severely deformed Cucitations
- 2016Transition‐Metal Carbodiimides as Molecular Negative Electrode Materials for Lithium‐ and Sodium‐Ion Batteries with Excellent Cycling Propertiescitations
- 2016Transition-Metal Carbodiimides as Molecular Negative Electrode Materials for Lithium- and Sodium-Ion Batteries with Excellent Cycling Propertiescitations
- 2014Oxidation behaviour of the 47Nb 16Si 25Ti 8Hf 2Al 2Cr alloy sheet and vibrational spectroscopycitations
- 2013Atomic scale characterization of the nucleation and growth of SnO2 particles in oxidized CuSn alloyscitations
Places of action
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article
Atomic scale characterization of the nucleation and growth of SnO2 particles in oxidized CuSn alloys
Abstract
The internal oxidation of Sn was investigated to understand the oxidation kinetics of monophase CuSn alloys. SnO2 particles were characterized by analytical transmission electron microscopy. The orientation relationship between SnO2 and Cu was determined with a special emphasis on the atomic scale structure of Cu/SnO2 interfaces (misfit dislocations and chemical structure). Habit planes with a pure oxygen plane terminating the SnO2 phase are greatly favored and large misfits promote the growth of plate shaped precipitates.