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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Jackson, Howard E.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2020Exploring the band structure of Wurtzite InAs nanowires using photocurrent spectroscopycitations
- 2012Photomodulated Rayleigh scattering from single semiconductor nanowires
- 2011Photomodulated rayleigh scattering of single semiconductor nanowirescitations
- 2011III-V semiconductor nanowires for optoelectronic device applicationscitations
- 2009Carrier dynamics and quantum confinement in type II ZB-WZ InP nanowire homostructures
- 2008High purity GaAs nanowires free of planar defectscitations
- 2002Mechanics of load transfer from matrix to fiber under flexural loading in a glass matrix composite using microfluorescence spectroscopycitations
- 2001Characterization of residual stresses in a sapphire-fiber-reinforced glass-matrix composite by micro-fluorescence spectroscopycitations
Places of action
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article
III-V semiconductor nanowires for optoelectronic device applications
Abstract
Semiconductor nanowires have recently emerged as a new class of materials with significant potential to reveal new fundamental physics and to propel new applications in quantum electronic and optoelectronic devices. Semiconductor nanowires show exceptional promise as nanostructured materials for exploring physics in reduced dimensions and in complex geometries, as well as in one-dimensional nanowire devices. They are compatible with existing semiconductor technologies and can be tailored into unique axial and radial heterostructures. In this contribution we review the recent efforts of our international collaboration which have resulted in significant advances in the growth of exceptionally high quality III-V nanowires and nanowire heterostructures, and major developments in understanding the electronic energy landscapes of these nanowires and the dynamics of carriers in these nanowires using photoluminescence, time-resolved photoluminescence and terahertz conductivity spectroscopy.