| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Reid, Gillian
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (50/50 displayed)
- 2024Electrodeposition of bismuth, tellurium and bismuth telluride through sub-10 nm mesoporous silica thin filmscitations
- 2024Fluidized bed chemical vapor deposition on hard carbon powders to produce composite energy materials
- 2024Electrodeposition of 2D layered tungsten diselenide thin films using a single source precursorcitations
- 2023High sodium-ion battery capacity in sulfur-deficient tin(II) sulfide thin films with a microrod morphologycitations
- 2023Temperature effects on the electrodeposition of semiconductors from a weakly coordinating solventcitations
- 2022Vertical and Lateral Electrodeposition of 2D Material Heterostructures
- 2022Diffusion in weakly coordinating solventscitations
- 2022Tungsten(VI) selenide tetrachloride, WSeCl 4 - synthesis, properties, coordination complexes and application of [WSeCl 4 (SenBu 2 )] for CVD growth of WSe 2 thin filmscitations
- 20222D material based optoelectronics by electroplating
- 20222D material based optoelectronics by electroplating
- 2021Mono- and di-phosphine oxide complexes of aluminium, gallium and indium with weakly coordinating triflate anions – Synthesis, structures and propertiescitations
- 2021Electrodeposited WS 2 monolayers on patterned graphenecitations
- 2021Low pressure CVD of GeE (E = Te, Se, S) thin films from alkylgermanium chalcogenolate precursors and effect of the deposition temperature on the thermoelectric performance of GeTecitations
- 2021Low pressure CVD of GeE (E = Te, Se, S) thin films from alkylgermanium chalcogenolate precursors and effect of the deposition temperature on the thermoelectric performance of GeTecitations
- 2021Low temperature CVD of thermoelectric SnTe thin films from the single source precursor, [nBu3Sn(TenBu)]citations
- 2021Low temperature CVD of thermoelectric SnTe thin films from the single source precursor, [nBu3Sn(TenBu)]citations
- 2021Tungsten disulfide thin films via electrodeposition from a single source precursorcitations
- 2021Lateral growth of MoS2 2D material semiconductors over an insulator via electrodepositioncitations
- 2021Lateral growth of MoS 2 2D material semiconductors over an insulator via electrodepositioncitations
- 2020Large-area electrodeposition of few-layer MoS2 on graphene for 2D material heterostructurescitations
- 2020Thermoelectric properties of bismuth telluride thin films electrodeposited from a non-aqueous solutioncitations
- 2020Selective chemical vapor deposition approach for Sb2Te3 thin film micro-thermoelectric generatorscitations
- 2020Chloroantimonate electrochemistry in dichloromethanecitations
- 2020Improved thermoelectric performance of Bi2Se3 alloyed Bi2Te3 thin films via low pressure chemical vapour depositioncitations
- 2020Large-area electrodeposition of few-layer MoS 2 on graphene for 2D material heterostructurescitations
- 20202D SnSe nanonetworks; growth and evaluation for Li-ion battery applications
- 2020Electrodeposition of MoS2 from dichloromethanecitations
- 2020Improved thermoelectric performance of Bi 2 Se 3 alloyed Bi 2 Te 3 thin films via low pressure chemical vapour depositioncitations
- 2018Towards a 3D GeSbTe phase change memory with integrated selector by non-aqueous electrodepositioncitations
- 2018Combination of solid state and electrochemical impedance spectroscopy to explore effects of porosity in sol-gel derived BaTiO3 thin filmscitations
- 2018Electrodeposition of a functional solid state memory material – germanium antimony telluride from a non-aqueous plating bathcitations
- 2017Tin, bismuth, and tin–bismuth alloy electrodeposition from chlorometalate salts in deep eutectic solventscitations
- 2016Haloplumbate salts as reagents for the non-aqueous electrodeposition of leadcitations
- 2016A versatile precursor system for supercritical fluid electrodeposition of main-group materialscitations
- 2015Chemical vapour deposition of antimony chalcogenides with positional and orientational control: precursor design and substrate selectivitycitations
- 2015Aza-macrocyclic complexes of Group 1 cations:synthesis, structures and density functional theory studycitations
- 2015Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge2Sb2Te5phase change memorycitations
- 2015A Versatile Precursor System for Supercritical Fluid Electrodeposition of Main-Group Materialscitations
- 2015Phase-change memory properties of electrodeposited Ge-Sb-Te thin filmcitations
- 2014Niobium(v) and tantalum(v) halide chalcogenoether complexes – towards single source CVD precursors for ME2thin filmscitations
- 2013Non-aqueous electrodeposition of metals and metalloids from halometallate saltscitations
- 2013Low pressure chemical vapour deposition of crystalline Ga2Te3 and Ga2Se3 thin films from single source precursors using telluroether and selenoether complexescitations
- 2013Telluroether and selenoether complexes as single source reagents for low pressure chemical vapor deposition of crystalline Ga2Te3 and Ga2Se3 thin filmscitations
- 2013Chromium(V) oxide trichloride, and some pentachlorido-oxido-chromate(V) salts: structures and spectroscopic characterizationcitations
- 2012Highly selective chemical vapor deposition of tin diselenide thin films onto patterned substrates via single source diselenoether precursorscitations
- 2011Chemical vapor deposition of GaP and GaAs thin films from [nBu2Ga(µ-EtBu2)2GanBu2] (E= P or As) and Ga(PtBu2)3citations
- 2010Synthesis and structure of [{C7F15CO2}2AgAu(PPh3)]2 and its use in electrodeposition of gold–silver alloyscitations
- 2009Spectroscopic and Vanadium K-Edge EXAFS Studies on VO2Cl and the Crystal Structure of [{Cl2VO(O2PCl2)(POCl3)}2]citations
- 2009Electrodeposition of metals from supercritical fluidscitations
- 2001Silver(I) complexes with the mixed P/O donor ligand Ph2P(CH2)(2)O(CH2)(2)O(CH2)(2)PPh2 (L-1) and the crystal structures of Ag(L-1) (CF3SO3), Ag-2(L-1)(3) (CF3SO3)(2) and Ag(L-1)(NO3)citations
Places of action
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article
Mono- and di-phosphine oxide complexes of aluminium, gallium and indium with weakly coordinating triflate anions – Synthesis, structures and properties
Abstract
<p>Reaction of the Group 13 triflates, M(OTf)<sub>3</sub> (M = Al, Ga, In; OTf = CF<sub>3</sub>SO<sub>3</sub><sup>−</sup>), with 3 mol. eq. of R<sub>3</sub>PO (R = Ph or Me) gives the six-coordinate complexes, [M(OTf)<sub>3</sub>(R<sub>3</sub>PO)<sub>3</sub>], with coordinated triflate, as white powdered solids. Similarly, using 3 mol. eq. of PyNO (pyridine-N-oxide) readily forms [In(OTf)<sub>3</sub>(PyNO)<sub>3</sub>], whose crystal structure confirms a mer octahedral arrangement. In contrast, reaction of the harder Lewis acids Al(III) and Ga(III) with PyNO produce mixtures, mostly likely of the 3:1 and 4:1 species, [M(OTf)<sub>3</sub>(PyNO)<sub>3</sub>] and [M(OTf)<sub>2</sub>(PyNO)<sub>4</sub>][OTf] (M = Al, Ga). Both of the tetrakis species have been confirmed via single crystal X-ray studies and shown to exist as trans isomers. Higher ratios (4:1, 5:1 and 6:1) of Me<sub>3</sub>PO coordinated to In(OTf)<sub>3</sub> can also be achieved by varying the reaction stoichiometry appropriately, with the coordinated OTf groups readily displaced by the Me<sub>3</sub>PO. Crystal structures of two polymorphs of the salt, [In(OTf)<sub>2</sub>(Me<sub>3</sub>PO)<sub>4</sub>][In{(OH<sub>2</sub>)<sub>2</sub>(OTf)<sub>4</sub>}(Me<sub>3</sub>PO)<sub>4</sub>], in which the [In{(OH<sub>2</sub>)<sub>2</sub>(OTf)<sub>4</sub>}(Me<sub>3</sub>PO)<sub>4</sub>]<sup>−</sup> anion is (unusually) comprised of a ‘In<sup>III</sup>(OH<sub>2</sub>)<sub>2</sub>(Me<sub>3</sub>PO)<sub>4</sub>′ unit with four OTf anions H-bonded to the aquo ligands, giving the overall monoanionic charge. A similar arrangement is present in [In(OTf)<sub>2</sub>(Ph<sub>3</sub>PO)<sub>4</sub>][In{(OH<sub>2</sub>)<sub>4</sub>(OTf)<sub>4</sub>}(Ph<sub>3</sub>PO)<sub>2</sub>], the structure of which shows that all of the H atoms associated with the four aquo ligands in the [In{(OH<sub>2</sub>)<sub>4</sub>(OTf)<sub>4</sub>}(Ph<sub>3</sub>PO)<sub>2</sub>]<sup>−</sup> form significant H-bonds to the OTf groups; specifically, the four OTf<sup>−</sup> anions each show two O⋯H interactions, forming bridges that link the equatorial aquo ligands into a 24-membered ‘pseudo-macrocyclic’ ring. The crystal structure of the mononuclear 5:1 complex, [Ga(Me<sub>3</sub>PO)<sub>5</sub>(MeCN)][OTf]<sub>3</sub>, is also described. Using the diphosphine dioxide, dppmO<sub>2</sub> (Ph<sub>2</sub>P(O)CH<sub>2</sub>P(O)Ph<sub>2</sub>), with M(OTf)<sub>3</sub> in a 3:1 ratio readily affords the tris-chelate species, [M(dppmO<sub>2</sub>)<sub>3</sub>][OTf]<sub>3</sub> for all three metals, while a 2:1 ratio also gives [Ga(OTf)<sub>2</sub>(dppmO<sub>2</sub>)<sub>2</sub>][OTf]. Crystal structures of both [Al(dppmO<sub>2</sub>)<sub>3</sub>][OTf]<sub>3</sub>·MeCN and [Ga(dppmO<sub>2</sub>)<sub>3</sub>][OTf]<sub>3</sub>·2CHCl<sub>3</sub> are reported. Multinuclear (<sup>1</sup>H, <sup>13</sup>C{<sup>1</sup>H}, <sup>19</sup>F{<sup>1</sup>H}, <sup>31</sup>P{<sup>1</sup>H}, <sup>27</sup>Al, <sup>71</sup>Ga and <sup>115</sup>In, where appropriate) NMR data show that in CD<sub>3</sub>CN the complexes are labile and the different R<sub>3</sub>PO coordination environments are not distinguished (although exchange between coordinated and ‘free’ Me<sub>3</sub>PO is slow on the <sup>31</sup>P NMR timescale), while the MeCN solvent also replaces OTf in the metal coordination sphere.</p>