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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Aghajamali, Alireza
in Cooperation with on an Cooperation-Score of 37%
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Publications (8/8 displayed)
- 2020Band gap engineering in constant total length nonmagnetized plasma-dielectric multilayerscitations
- 2020Epitaxial Formation of SiC on (100) Diamondcitations
- 2019Transferability in interatomic potentials for carboncitations
- 2018Unphysical nucleation of diamond in the extended cutoff Tersoff potentialcitations
- 2017Double-negative multilayer containing an extrinsic random layer thickness magnetized cold plasma photonic quantum-well defectcitations
- 2016Study of optical reflectance properties in 1D annular photonic crystal containing double negative (DNG) metamaterialscitations
- 2016Near-infrared tunable narrow filter properties in a 1D photonic crystal containing semiconductor metamaterial photonic quantum-well defectcitations
- 2014Effects of loss factors on zero permeability and zero permittivity gaps in 1D photonic crystal containing DNG materialscitations
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article
Near-infrared tunable narrow filter properties in a 1D photonic crystal containing semiconductor metamaterial photonic quantum-well defect
Abstract
The near-infrared (NIR) narrow filter properties in the transmission spectra of a one-dimensional photonic crystal doped with semiconductor metamaterial photonic quantum-well defect (PQW) were theoretically studied. The behavior of the defect mode as a function of the stack number of the PQW defect structure, the filling factor of semiconductor metamaterial layer, the polarization and the angle of incidence were investigated for Al-doped ZnO (AZO) and ZnO as the semiconductor metamaterial layer. It is found that the frequency of the defect mode can be tuned by variation of the period of the defect structure, polarization, incidence angle, and the filling factor of the semiconductor metamaterial layer. It is also shown that the number of the defect mode is independent of the period of the PQW defect structure and is in sharp contrast with the case where a common dielectric or metamaterial defect are used. The results also show that for both polarizations the defect mode is red-shifted as the number of the defect period and filling factor increase. An opposite trend is observed as the angle of incidence increases. The proposed structure could provide useful information for designing new types of tuneable narrowband filters at NIR region.