| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bid, Aveek
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2022Observation of hidden electronic phases in 1T-TaS<SUB>2</SUB> through conductance fluctuation spectroscopy
- 2022Observation of Quantum Griffith's singularity and anomalous metal in LaScO<SUB>3</SUB>/SrTiO<SUB>3</SUB> heterostructure
- 2022Temperature dependent cloaking of the Quantum Griffiths Singularity in LaScO$_3$/SrTiO$_3$ heterostructures
- 2019Resistance fluctuation spectroscopy of thin films of 3D topological insulator BiSbTeSe<SUB>1.6</SUB>citations
- 2018Strain-induced continuous transition from Weak localization regime to Strong localization regime in a doped Mott Insulator
- 2017Effect of microstructure on the electronic transport properties of epitaxial CaRuO<SUB>3</SUB> thin filmscitations
- 2016Structural instability and phase co-existence driven non-Gaussian resistance fluctuations in metal nanowires at low temperaturescitations
- 2014Probing a spin-glass state in SrRuO<SUB>3</SUB> thin films through higher-order statistics of resistance fluctuationscitations
- 2005Experimental study of Rayleigh instability in metallic nanowires using resistance fluctuations measurements from 77K to 375Kcitations
Places of action
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article
Effect of microstructure on the electronic transport properties of epitaxial CaRuO<SUB>3</SUB> thin films
Abstract
We have carried out extensive comparative studies of the structural and transport properties of CaRuO<SUB>3</SUB> thin films grown under various oxygen pressure. We find that the preferred orientation and surface roughness of the films are strongly affected by the oxygen partial pressure during growth. This in turn affects the electrical and magnetic properties of the films. Films grown under high oxygen pressure have the least surface roughness and show transport characteristics of a good metal down to the lowest temperature measured. On the other hand, films grown under low oxygen pressures have high degree of surface roughness and show signatures of ferromagnetism. We could verify that the low frequency resistance fluctuations (noise) in these films arise due to thermally activated fluctuations of local defects and that the defect density matches with the level of disorder seen in the films through structural characterizations....