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Mayer, M. A.
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Publications (5/5 displayed)
- 2013P-type and undoped InGaN across the entire alloy composition range
- 2013P-type InGaN across the entire alloy composition rangecitations
- 2012P-type InGaN across entire composition range
- 2011Mg doped InN and confirmation of free holes in InNcitations
- 2009Electrical and electrothermal transport in InNcitations
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article
Electrical and electrothermal transport in InN
Abstract
The transport properties of Mg doped and undoped InN films are studied with capacitance-voltage, thermopower, and Hall mobility measurements. A positive Seebeck coefficient is observed for Mg doped InN confirming p-type conductivity, though high doping and structural defect density can lead to n-type films. Transport measurements of undoped films are analyzed employing Rode's iterative Boltzmann equation method. Observed thermopower, Hall mobility, and dislocation density data for undoped films are consistent with calculations including the effects of charged line defect (donor-type dislocation) scattering. © 2009 Elsevier B.V. All rights reserved.