Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (1/1 displayed)

  • 2007From extended defects and interfaces to point defects in three dimensions-The case of InxGa1-xN6citations

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Shubina, T. V.
1 / 2 shared
Specht, P.
1 / 1 shared
Kisielowski, C.
1 / 1 shared
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2007

Co-Authors (by relevance)

  • Shubina, T. V.
  • Specht, P.
  • Kisielowski, C.
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article

From extended defects and interfaces to point defects in three dimensions-The case of InxGa1-xN

  • Shubina, T. V.
  • Specht, P.
  • Bartel, T. P.
  • Kisielowski, C.
Abstract

The In<sub>x</sub>Ga<sub>1-x</sub>N alloy system is used as an example to describe achievements and limitations that are given by noise levels in lattice images from transmission electron microscopes. Unlike many other experimental techniques, noise limits must be determined afresh from image to image since they vary with microscope performance, sample preparation, radiation damage if present, and operator skills. Both, the determination of the indium distribution in In<sub>x</sub>Ga<sub>1-x</sub>N alloys by strain mapping and the detection of indium clusters in InN by imaging, are largely affected by noise limitations. As a result, it is challenging to probe for the distribution of indium atoms in alloys with x&lt;0.2 or x&gt;0.8, which is of importance if one aims at understanding the nucleation of indium atom clusters in GaN or InN. We present results that point towards cluster formation in quantum wells with x&lt;0.2 and show that photoluminescence at 0.5-0.7 eV relate to the presence of indium clusters in InN. A reliable detection of single indium atoms, however, will require further improvement of detection limits, which one can expect from the next generation of electron microscopes that are developed in DoE's TEAM Project.

Topics
  • impedance spectroscopy
  • photoluminescence
  • cluster
  • Indium
  • point defect