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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Beeman, Jeffrey W.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2016Mechanistic insights into chemical and photochemical transformations of bismuth vanadate photoanodescitations
- 2010Heat flow model for pulsed laser melting and rapid solidification of ion implanted GaAscitations
- 2010Development of ZnTe1-xOx intermediate band solar cells
- 2008InGaN thin films grown by ENABLE and MBE techniques on silicon substrates
- 2007Tuning of ferromagnetism through anion substitution in Ga-Mn-pnictide ferromagnetic semiconductorscitations
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article
Tuning of ferromagnetism through anion substitution in Ga-Mn-pnictide ferromagnetic semiconductors
Abstract
We have synthesized Ga<sub>1-x</sub>Mn<sub>x</sub>As<sub>1-y</sub>P<sub>y</sub> and Ga<sub>1-x</sub>Mn<sub>x</sub>P<sub>1-y</sub>N<sub>y</sub> by the combination of ion implantation and pulsed-laser melting. We find that the incorporation of isovalent impurities with smaller atomic radii leads to a realignment of the magnetic easy axis in Ga<sub>1-x</sub>Mn<sub>x</sub>P<sub>1-y</sub>N<sub>y</sub>/GaP and Ga<sub>1-x</sub>Mn<sub>x</sub>As<sub>1-y</sub>P<sub>y</sub>/GaAs thin films from in-plane to out-of-plane. This tensile-strain-induced magnetic anisotropy is reminiscent of that observed in Ga<sub>1-x</sub>Mn<sub>x</sub>As grown on larger lattice constant (In, Ga)As buffer layers indicating that the role of strain in determining magnetic anisotropy is fundamental to III-Mn-V materials. In addition, we observe a decrease in the ferromagnetic Curie temperature in Ga<sub>1-x</sub>Mn<sub>x</sub>As<sub>1-y</sub>P<sub>y</sub> with increasing y from 0 to 0.028. Such a decrease may result from localization of holes as the P/As ratio on the Group V sublattice increases. © 2007 Elsevier B.V. All rights reserved.