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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Farshchi, R.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2009Structural, magnetic, and transport properties of laser-annealed GaAscitations
- 2008Electrical transport and ferromagnetism in Ga1-x Mnx As synthesized by ion implantation and pulsed-laser meltingcitations
- 2007Synthesis and optical properties of multiband III-V semiconductor alloyscitations
- 2007Synthesis of highly mismatched alloys using ion implantation and pulsed laser meltingcitations
- 2006Multiband GaNAsP quaternary alloyscitations
- 2006Doping and defect control of ferromagnetic semiconductors formed by ion implantation and pulsed-laser meltingcitations
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article
Doping and defect control of ferromagnetic semiconductors formed by ion implantation and pulsed-laser melting
Abstract
We demonstrate a simple but effective route for the synthesis of ferromagnetic semiconductors that combines Mn ion implantation (II) and pulsed-laser melting (PLM). By this process Ga<sub>1-x</sub>Mn <sub>x</sub>As films exhibiting a ferromagnetic Curie temperature (T <sub>C</sub>) exceeding 130 K have been synthesized. These materials possess electrical and magnetic characteristics similar to molecular beam epitaxy-grown (MBE-grown) films that are tunable through experimental parameters such as implantation dose, laser energy fluence, and co-doping with Te donors. We have also used II-PLM to form ferromagnetic single-crystalline Ga<sub>1-</sub> <sub>x</sub>Mn<sub>x</sub>P films. These films display magnetic properties similar to their arsenide counterparts despite remaining non-metallic and becoming strongly insulating at low temperatures. Unlike as-grown MBE films, both Ga<sub>1-x</sub>Mn<sub>x</sub>P and Ga<sub>1-</sub> <sub>x</sub>Mn<sub>x</sub>As formed by II-PLM do not contain Mn at interstitial sites; instead, non-substitutional Mn atoms are found to be randomly located, perhaps as clusters. As a result, post-PLM thermal annealing at temperatures higher than 300 °C leads to a decrease in T<sub>C</sub> as Mn atoms leave substitutional sites. © 2005 Elsevier B.V. All rights reserved.