People | Locations | Statistics |
---|---|---|
Naji, M. |
| |
Motta, Antonella |
| |
Aletan, Dirar |
| |
Mohamed, Tarek |
| |
Ertürk, Emre |
| |
Taccardi, Nicola |
| |
Kononenko, Denys |
| |
Petrov, R. H. | Madrid |
|
Alshaaer, Mazen | Brussels |
|
Bih, L. |
| |
Casati, R. |
| |
Muller, Hermance |
| |
Kočí, Jan | Prague |
|
Šuljagić, Marija |
| |
Kalteremidou, Kalliopi-Artemi | Brussels |
|
Azam, Siraj |
| |
Ospanova, Alyiya |
| |
Blanpain, Bart |
| |
Ali, M. A. |
| |
Popa, V. |
| |
Rančić, M. |
| |
Ollier, Nadège |
| |
Azevedo, Nuno Monteiro |
| |
Landes, Michael |
| |
Rignanese, Gian-Marco |
|
Hourahine, Benjamin
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2020Luminescence behavior of semipolar (10-11) InGaN/GaN "bow-tie" structures on patterned Si substratescitations
- 2019Collapsed carbon nanotubes : from nano to mesoscale via density functional theory-based tight-binding objective molecular modelingcitations
- 2019Collapsed carbon nanotubescitations
- 2018Dislocation contrast in electron channelling contrast images as projections of strain-like componentscitations
- 2017Coherent control of plasmons in nanoparticles with nonlocal responsecitations
- 2016Reprint of
- 2016Electron channelling contrast imaging for III-nitride thin film structurescitations
- 2013Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscopecitations
- 2012Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscopecitations
- 2010Theoretical modelling of rare Earth dopants in GaNcitations
- 2009Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition rangecitations
- 2007Efficient tight-binding approach for the study of strongly correlated systemscitations
- 2006Rare earth doped III-nitrides for optoelectronicscitations
- 2006Hydrogen molecules and platelets in germaniumcitations
Places of action
Organizations | Location | People |
---|
article
Hydrogen molecules and platelets in germanium
Abstract
<p>There has been substantial interest in the behaviour of hydrogen in silicon over the last decade, often focused on the behaviour of the interstitial hydrogen molecule and {I I I} oriented platelets. Less is known about analogous hydrogen-related defects in germanium, but planar defects are known, and the molecule has possibly been observed recently by Raman scattering.</p><p>We present preliminary results of first-principles calculations on both the H-2 molecule and a range of platelet geometries ill germanium. For comparison the molecule in GaAs and Si is also simulated. Energetics and vibrational modes of the defects are presented. Our calculations show the observed weak mode at 3834cm(-1) in Ge is indeed consistent with the interstitial hydrogen molecule. (c) 2005 Elsevier B.V. All rights reserved.</p>