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Daud, U.
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article
Diluted magnetic semiconductors formed by ion implantation and pulsed-laser melting
Abstract
Using ion implantation followed by pulsed-laser melting (PLM), we have synthesized ferromagnetic films of Ga<sub>1-x</sub>Mn<sub>x</sub>As. Ion-channeling experiments reveal that these films are single crystalline and have high Mn substitutionality while variable temperature resistivity measurements reveal the strong Mn-hole interactions characteristic of carrier-mediated ferromagnetism in homogeneous Diluted magnetic semiconductors. We have observed Curie temperatures (T<sub>C</sub>s) of approximately 80 K for films with substitutional Mn concentrations of x = 0.04. The use of n-type counter doping as a means of increasing Mn substitutionality and T<sub>C</sub> is explored by co-implantation of Mn and Te into GaAs<sub>.</sub> In Ga <sub>1-x</sub>Mn<sub>x</sub>P samples synthesized using our technique, the implanted layer regrows as an epitaxial single crystal capped by a highly defective surface layer. These samples display ferromagnetism with T <sub>C</sub>≈23 K. © 2003 Elsevier B.V. All rights reserved.