| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Shan, W.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2008Energetic Beam Synthesis of Dilute Nitrides and Related Alloyscitations
- 2005Highly mismatched alloys for intermediate band solar cells
- 2004Oxygen induced band-gap reduction in ZnOxSe1-x alloyscitations
- 2004Diluted ZnMnTe oxidecitations
- 2004Synthesis and properties of highly mismatched II-O-VI alloyscitations
- 2004Effects of pressure on the band structure of highly mismatched Zn1-yMnyOxTe1-x alloyscitations
- 2004Effect of oxygen on the electronic band structure of II-O-VI alloyscitations
- 2004Synthesis and optical properties of II-O-VI highly mismatched alloyscitations
- 2003Band-gap bowing effects in BxGa1-xAs alloyscitations
- 2003Mutual passivation of group IV donors and isovalent nitrogen in diluted GaNxAs1-x alloyscitations
- 2003Mutual passivation of group IV donors and nitrogen in diluted GaN xAs1-x alloyscitations
- 2003Effect of oxygen on the electronic band structure in ZnOxSe1-x alloyscitations
- 2002Band anticrossing effects in MgyZn1-yTe 1-xSex alloyscitations
- 2000Effect of nitrogen on the electronic band structure of group III-N-V alloys
- 2000Synthesis of III-Nx-V1-x Thin Films by N Ion Implantationcitations
- 2000Effect of nitrogen on the band structure of III-N-V alloys
Places of action
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article
Mutual passivation of group IV donors and isovalent nitrogen in diluted GaNxAs1-x alloys
Abstract
We demonstrate the mutual passivation of electrically active group IV donors and isovalent N atoms in the GaN<sub>x</sub>As<sub>1-x</sub> alloy system. This phenomenon occurs through the formation of a donor-nitrogen bond in the nearest neighbor IV<sub>Ga</sub>-N<sub>As</sub> pairs. In Si-doped GaInN<sub>0.017</sub>As<sub>0.983</sub> the electron concentration starts to decrease rapidly at an annealing temperature of 700°C from ∼ 3 × 10<sup>19</sup>cm<sup>-3</sup> in the as-grown state to less than 10 <sup>16</sup>cm<sup>-3</sup> after an annealing at 900°C for 10s. At the same time, annealing of this sample at 950°C increases the gap by about 35 meV, corresponding to a reduction of the concentration of the active N atoms by an amount very close to the total Si concentration. We also show that the formation of Si<sub>Ga</sub>-N<sub>As</sub> pairs is controlled by the diffusion of Si via Ga vacancies to the nearest N<sub>As</sub> site. The general nature of this mutual passivation effect is confirmed by our study of Ge-doped GaN<sub>x</sub>As<sub>1-x</sub> layers formed by N and Ge co-implantation in GaAs followed by pulsed laser melting. Published by Elsevier B.V.