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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Jura, M.
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Topics
Publications (2/2 displayed)
- 2018Compositionally tunable ternary Bi2(Se1-xTex)3 and (Bi1-ySby)2Te3 thin films via low pressure chemical vapor depositioncitations
- 2013Low pressure chemical vapour deposition of crystalline Ga2Te3 and Ga2Se3 thin films from single source precursors using telluroether and selenoether complexescitations
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article
Low pressure chemical vapour deposition of crystalline Ga2Te3 and Ga2Se3 thin films from single source precursors using telluroether and selenoether complexes
Abstract
Neutral telluro- and seleno-ether complexes of the form [GaCl3(nBu2E)] (E = Se, Te) and [(GaCl3)2{nBuE(CH2)nEnBu}] (E = Se, n = 2; E = Te, n = 3) have been synthesised via a facile, high yielding reaction. These complexes have been shown to be suitable precursors for the low pressure chemical vapour deposition of Ga2Te3 and Ga2Se3, the first reported example of a telluroether complex being used for the deposition of a metal telluride. The thin films have been characterised by X- ray diffraction, SEM, EDX, Raman and Hall measurements. The films are crystalline, have good, uniform coverage and Raman spectra match literature values. Hall measurements show that the thin films are p-type semiconductors. Competitive deposition of Ga2Te3 onto photolithographically patterned SiO2/TiN substrates shows a preference for deposition onto TiN