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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Boratto, Miguel Henrique
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article
Low voltage and high frequency vertical organic field effect transistor based on rod-coating silver nanowires grid electrode
Abstract
e report on low voltage and high frequency vertical organic field-effect transistors (VOFETs) using silver nanowires (AgNWs) as intermediate grid electrode (source) deposited through Mayer rod-coating. The optimized AgNWs electrodes deposited on insulator surface followed by low thermal annealing have sheet resistance of ∼30 Ω/sq and surface roughness of 70 ± 20 nm. Crosslinked poly(vinyl alcohol) is used as gate insulator and C 60 fullerene as n-type channel semiconductor. Our VOFETs have high output current density of 2.5 mA/cm 2 and on/off ratio of 5 × 10 3 with supply voltages up to 2 V. A fast switching performance of sub-1 μs at frequency gate modulation of 0.13 MHz is demonstrated. Moreover, our devices are produced based on low-cost methods compatible with industrial-scale production of organic electronics.