| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Santos, Gil Nonato C.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (1/1 displayed)
Places of action
| Organizations | Location | People |
|---|
article
Negative differential resistance in polymer tunnel diodes using atomic layer deposited, TiO2 tunneling barriers at various deposition temperatures
Abstract
<p>Atomic layer deposition (ALD) presents a method to deposit uniform and conformal thin-film layers with a high degree of control and repeatability. Quantum functional devices that provide opportunities in low-power molecular and organic based memory and logic via thin metal-oxide tunneling layer were previously reported by Yoon et al. [1]. Demonstrated here area polymer tunnel diodes (PTD) with high negative differential resistance (NDR) using an ALD deposited tunneling layer grown between 250 °C – 350 °C. A critical relationship between deposition temperature, oxygen vacancy concentration and room temperature NDR is presented. In this work, for a TiO<sub>2</sub> deposition temperature of 250 °C, the peak NDR voltage position (V<sub>peak</sub>) and associated peak current density (J<sub>peak</sub>) are ∼4.3 V and −0.14 A/cm<sup>2</sup>, respectively, with a PVCR as high as 1.69 while operating at room temperature. The highest PVCR recorded was 4.89 ± 0.18 using an ALD deposition temperature of 350 °C. The key advantages of the ALD process used in fabrication of PTDs are increased repeatability and manufacturability.</p>