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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Berger, Paul R.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2022Flexible Polymer Rectifying Diode on Plastic Foils with MoO3Hole Injection
- 2021Selective atomic layer deposition on flexible polymeric substrates employing a polyimide adhesive as a physical maskcitations
- 2021Selective atomic layer deposition on flexible polymeric substrates employing a polyimide adhesive as a physical maskcitations
- 2020RTD Light Emission around 1550 nm with IQE up to 6% at 300 Kcitations
- 20190.7-GHz Solution-Processed Indium Oxide Rectifying Diodescitations
- 2019930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire templatecitations
- 2017High performance, Low-voltage, Solution-processable Indium Oxide Thin Film Transistors using Anodic Al2O3 Gate Dielectric.
- 2017Negative differential resistance in polymer tunnel diodes using atomic layer deposited, TiO2 tunneling barriers at various deposition temperaturescitations
- 2012200-mm CVD grown Si/SiGe resonant interband tunnel diodes optimized for high peak-to-valley current ratios
- 2011Interfacial design and structure of protein/polymer films on oxidized AlGaN surfacescitations
- 2010Plasma-polymerized multistacked bipolar gate dielectric for organic thin-film transistorscitations
- 20084.8% efficient poly(3-hexylthiophene)-fullerene derivative (1:0.8) bulk heterojunction photovoltaic devices with plasma treated Ag Ox /indium tin oxide anode modificationcitations
- 2008Enhanced emission using thin Li-halide cathodic interlayers for improved injection into poly(p-phenylene vinylene) derivative PLEDscitations
- 2008Plasma-polymerized multistacked organic bipolar filmscitations
- 2006Low sidewall damage plasma etching using ICP-RIE with HBr chemistry of Si/SiGe resonant interband tunnel diodescitations
- 2000Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealingcitations
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article
Negative differential resistance in polymer tunnel diodes using atomic layer deposited, TiO2 tunneling barriers at various deposition temperatures
Abstract
<p>Atomic layer deposition (ALD) presents a method to deposit uniform and conformal thin-film layers with a high degree of control and repeatability. Quantum functional devices that provide opportunities in low-power molecular and organic based memory and logic via thin metal-oxide tunneling layer were previously reported by Yoon et al. [1]. Demonstrated here area polymer tunnel diodes (PTD) with high negative differential resistance (NDR) using an ALD deposited tunneling layer grown between 250 °C – 350 °C. A critical relationship between deposition temperature, oxygen vacancy concentration and room temperature NDR is presented. In this work, for a TiO<sub>2</sub> deposition temperature of 250 °C, the peak NDR voltage position (V<sub>peak</sub>) and associated peak current density (J<sub>peak</sub>) are ∼4.3 V and −0.14 A/cm<sup>2</sup>, respectively, with a PVCR as high as 1.69 while operating at room temperature. The highest PVCR recorded was 4.89 ± 0.18 using an ALD deposition temperature of 350 °C. The key advantages of the ALD process used in fabrication of PTDs are increased repeatability and manufacturability.</p>