| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Gelinck, Gerwin H.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2023Origin and Energy of Intra-Gap States in Sensitive Near-Infrared Organic Photodiodescitations
- 2023Origin and Energy of Intra-Gap States in Sensitive Near-Infrared Organic Photodiodescitations
- 2022Multidimensional Perovskites for High Detectivity Photodiodescitations
- 2021A thin and flexible scanner for fingerprints and documents based on metal halide perovskitescitations
- 2021A thin and flexible scanner for fingerprints and documents based on metal halide perovskitescitations
- 2021Ultralow dark current in near-infrared perovskite photodiodes by reducing charge injection and interfacial charge generationcitations
- 2020On the origin of dark current in organic photodiodescitations
- 2019Short-channel vertical organic field-effect transistors with high on/off ratioscitations
- 2018A universal route to fabricate n-i-p multi-junction polymer solar cells via solution processingcitations
- 2018A universal route to fabricate n-i-p multi-junction polymer solar cells via solution processingcitations
- 2016Data retention in organic ferroelectric resistive switchescitations
- 2016Data retention in organic ferroelectric resistive switchescitations
- 2015Field-effect memory transistors based on arrays of nanowires of a ferroelectric polymer
- 2015Surface directed phase separation of semiconductor ferroelectric polymer blends and their use in non-volatile memoriescitations
- 2012Charge transport in amorphous InGaZnO thin film transistorscitations
- 2011Single-step solution processing of small-molecule organic semiconductor field-effect transistors at high yieldcitations
- 2011Multilevel information storage in ferroelectric polymer memoriescitations
Places of action
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article
Data retention in organic ferroelectric resistive switches
Abstract
Solution-processed organic ferroelectric resistive switches could become the long-missing non-volatile memory elements in organic electronic devices. To this end, data retention in these devices should be characterized, understood and controlled. First, it is shown that the measurement protocol can strongly affect the ‘apparent’ retention time and a suitable protocol is identified. Second, it is shown by experimental and theoretical methods that partial depolarization of the ferroelectric is the major mechanism responsible for imperfect data retention. This depolarization occurs in close vicinity to the semiconductor-ferroelectric interface, is driven by energy minimization and is inherently present in this type of phase-separated polymer blends. Third, a direct relation between data retention and the charge injection barrier height of the resistive switch is demonstrated experimentally and numerically. Tuning the injection barrier height allows to improve retention by many orders of magnitude in time, albeit at the cost of a reduced on/off ratio